With the rapid development of on-chip optical interconnects and optical computing in the
past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The responsivity of the photodetector (PhoD) schemes based on silicon (Si) is constrained
by its narrow bandwidth, indirect bandgap, and high surface reflectivity. Advanced …

A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is
disclosed. The method includes forming an interface layer on a portion of a substrate. A …

The first observations of plastically deformed germanium made immediately clear that
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …

We have developed a novel epitaxial growth technique called nanocontact epitaxy that
allows high quality Ge films to be epitaxially grown on Si (001) substrates using spherical …

US10522629B2 - Lattice-mismatched semiconductor structures with reduced dislocation defect
densities and related methods for device fabrication - Google Patents US10522629B2 …

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful
for application as a light source in Si photonics and channel material in next-generation field …

We have measured the time evolution of Ge nucleation density on SiO2 over a temperature
range of 673–973K and deposition rates from 5.1× 1013atoms/cm2s (5ML/min) to 6.9× …

This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …