High-Performance Based (x =4 or 5) van der Waals Magnetic Tunnel Junctions

B Wu, S Fang, J Yang, S Liu, Y Peng, Q Li, Z Lin… - Physical Review …, 2023 - APS
Recently synthesized two-dimensional (2D) van der Waals (vdW) ferromagnets, Fe x Ge Te
2 (x= 4 and 5), have attracted great attention due to their room-temperature Curie …

Large tunneling magnetoresistance in van der Waals magnetic tunnel junctions based on FeCl 2 films with interlayer antiferromagnetic couplings

J Han, C Lv, W Yang, X Wang, G Wei, W Zhao, X Lin - Nanoscale, 2023 - pubs.rsc.org
Antiferromagnets (AFMs) are some of the most promising candidates for next-generation
magnetic memory technology owing to their advantages over conventional ferromagnets …

Multistate magnetic tunnel junction based on a single two-dimensional van der Waals antiferromagnet

J Yang, B Wu, S Zhao, S Liu, J Lu, S Li, J Yang - Physical Review Applied, 2024 - APS
Antiferromagnets are emerging as promising competitors for advanced multistate memories
because of their ignorable stray fields, ultrafast resonance dynamics and, especially, the rich …

[HTML][HTML] Recent Progress in Two-Dimensional Magnetic Materials

G Shi, N Huang, J Qiao, X Zhang, F Hu, H Hu, X Zhang… - Nanomaterials, 2024 - mdpi.com
The giant magnetoresistance effect in two-dimensional (2D) magnetic materials has sparked
substantial interest in various fields; including sensing; data storage; electronics; and …

Large tunneling magnetoresistance in spin-filtering 1T-MnSe 2/h-BN van der Waals magnetic tunnel junction

Z Chen, X Liu, X Li, P Gao, ZJ Li, W Zhu, H Wang, X Li - Nanoscale, 2023 - pubs.rsc.org
The magnetic tunnel junction (MTJ), one of the most prominent spintronic devices, has been
widely utilized for memory and computation systems. Electrical writing is considered as a …

Layer-Dependent Magnetoresistance and Spin-Transfer Torque in -Based Magnetic Tunnel Junctions

B Wu, J Yang, S Liu, S Fang, Z Liu, Z Lin, J Shi… - Physical Review …, 2023 - APS
The recently synthesized two-dimensional van der Waals (vdW) ferromagnet 1 T-MnSe 2
has attracted great attention due to its room-temperature ferromagnetism. By using ab initio …

Mechanism of carrier do** induced magnetic phase transitions in two-dimensional materials

Y Lu, H Wang, L Wang, L Yang - Physical Review B, 2022 - APS
Electrically tuning long-range magnetic orders has been realized in two-dimensional (2D)
semiconductors via electrostatic do**. On the other hand, the observations are highly …

Light-assisted Néel spin currents in -symmetric antiferromagnetic semiconductors

S Fang, B Wu, Q Li, Z Yang, H Du, J Yang, Z Luo, J Lu - Physical Review B, 2024 - APS
Néel spin current is defined as the staggered spin current across different magnetic
sublattices and can manipulate the Néel vector of the antiferromagnet by its associated spin …

Tunneling magnetoresistance in all-antiferromagnetic Au-based tunnel junctions

X Jia, HM Tang, SZ Wang - Physical Review B, 2023 - APS
Antiferromagnetic (AF) spintronics offers the advantages of ultrahigh operating speed and
stability to a device in the presence of a magnetic field. To fully exploit these advantages, the …

Instability of the magnetic state of monolayers induced by strain and do**

J Tan, H Hu, B Cai, D Xu, G Ouyang - Physical Review B, 2022 - APS
The instability of magnetic states in two-dimensional magnetic materials plays a crucial role
in the application of spintronics. However, the instability mechanism and magnetic state …