High-Performance Based (x =4 or 5) van der Waals Magnetic Tunnel Junctions
Recently synthesized two-dimensional (2D) van der Waals (vdW) ferromagnets, Fe x Ge Te
2 (x= 4 and 5), have attracted great attention due to their room-temperature Curie …
2 (x= 4 and 5), have attracted great attention due to their room-temperature Curie …
Large tunneling magnetoresistance in van der Waals magnetic tunnel junctions based on FeCl 2 films with interlayer antiferromagnetic couplings
Antiferromagnets (AFMs) are some of the most promising candidates for next-generation
magnetic memory technology owing to their advantages over conventional ferromagnets …
magnetic memory technology owing to their advantages over conventional ferromagnets …
Multistate magnetic tunnel junction based on a single two-dimensional van der Waals antiferromagnet
Antiferromagnets are emerging as promising competitors for advanced multistate memories
because of their ignorable stray fields, ultrafast resonance dynamics and, especially, the rich …
because of their ignorable stray fields, ultrafast resonance dynamics and, especially, the rich …
[HTML][HTML] Recent Progress in Two-Dimensional Magnetic Materials
G Shi, N Huang, J Qiao, X Zhang, F Hu, H Hu, X Zhang… - Nanomaterials, 2024 - mdpi.com
The giant magnetoresistance effect in two-dimensional (2D) magnetic materials has sparked
substantial interest in various fields; including sensing; data storage; electronics; and …
substantial interest in various fields; including sensing; data storage; electronics; and …
Large tunneling magnetoresistance in spin-filtering 1T-MnSe 2/h-BN van der Waals magnetic tunnel junction
The magnetic tunnel junction (MTJ), one of the most prominent spintronic devices, has been
widely utilized for memory and computation systems. Electrical writing is considered as a …
widely utilized for memory and computation systems. Electrical writing is considered as a …
Layer-Dependent Magnetoresistance and Spin-Transfer Torque in -Based Magnetic Tunnel Junctions
The recently synthesized two-dimensional van der Waals (vdW) ferromagnet 1 T-MnSe 2
has attracted great attention due to its room-temperature ferromagnetism. By using ab initio …
has attracted great attention due to its room-temperature ferromagnetism. By using ab initio …
Mechanism of carrier do** induced magnetic phase transitions in two-dimensional materials
Electrically tuning long-range magnetic orders has been realized in two-dimensional (2D)
semiconductors via electrostatic do**. On the other hand, the observations are highly …
semiconductors via electrostatic do**. On the other hand, the observations are highly …
Light-assisted Néel spin currents in -symmetric antiferromagnetic semiconductors
Néel spin current is defined as the staggered spin current across different magnetic
sublattices and can manipulate the Néel vector of the antiferromagnet by its associated spin …
sublattices and can manipulate the Néel vector of the antiferromagnet by its associated spin …
Tunneling magnetoresistance in all-antiferromagnetic Au-based tunnel junctions
X Jia, HM Tang, SZ Wang - Physical Review B, 2023 - APS
Antiferromagnetic (AF) spintronics offers the advantages of ultrahigh operating speed and
stability to a device in the presence of a magnetic field. To fully exploit these advantages, the …
stability to a device in the presence of a magnetic field. To fully exploit these advantages, the …
Instability of the magnetic state of monolayers induced by strain and do**
J Tan, H Hu, B Cai, D Xu, G Ouyang - Physical Review B, 2022 - APS
The instability of magnetic states in two-dimensional magnetic materials plays a crucial role
in the application of spintronics. However, the instability mechanism and magnetic state …
in the application of spintronics. However, the instability mechanism and magnetic state …