Device architectures for high-speed SiGe HBTs
H Rücker, B Heinemann - 2019 IEEE BiCMOS and compound …, 2019 - ieeexplore.ieee.org
This paper reviews recent developments in process technology of high-speed SiGe HBTs at
IHP. Two device concepts, one with selective epitaxial growth and one with non-selective …
IHP. Two device concepts, one with selective epitaxial growth and one with non-selective …
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
B Heinemann, R Barth, D Bolze, J Drews… - 2010 International …, 2010 - ieeexplore.ieee.org
A SiGe HBT technology featuring f T/f max/BV CEO= 300GHz/500GHz/1.6 V and a minimum
CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to …
CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to …
SiGe bipolar transceiver circuits operating at 60 GHz
A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-
controlled oscillators have been implemented in a 0.12-/spl mu/m, 200-GHz f/sub T/290-GHz …
controlled oscillators have been implemented in a 0.12-/spl mu/m, 200-GHz f/sub T/290-GHz …
[KSIĄŻKA][B] The VLSI handbook
WK Chen - 1999 - taylorfrancis.com
Over the years, the fundamentals of VLSI technology have evolved to include a wide range
of topics and a broad range of practices. To encompass such a vast amount of knowledge …
of topics and a broad range of practices. To encompass such a vast amount of knowledge …
A 0.13 SiGe BiCMOS Technology Featuring f/f of 240/330 GHz and Gate Delays Below 3 ps
H Rücker, B Heinemann, W Winkler… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …
Subharmonic 220-and 320-GHz SiGe HBT receiver front-ends
E Ojefors, B Heinemann… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
Monolithically integrated 220-and 320-GHz receiver front-ends manufactured in an
engineering version of an f T/f max= 280/435-GHz SiGe technology are presented …
engineering version of an f T/f max= 280/435-GHz SiGe technology are presented …
Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications
This paper presents Si/SiGe: C and InP/GaAsSb HBTs which feature specific assets to
address submillimeter-wave and THz applications. Process and modeling status and …
address submillimeter-wave and THz applications. Process and modeling status and …
0.13 m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
G Avenier, M Diop, P Chevalier… - IEEE journal of solid …, 2009 - ieeexplore.ieee.org
This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to
millimeter-wave applications, including a high-speed (230/280 GHz f T/f MAX) and medium …
millimeter-wave applications, including a high-speed (230/280 GHz f T/f MAX) and medium …
Device and technology evolution for Si-based RF integrated circuits
The relationships between device feature size and device performance figures of merit
(FoMs) are more complex for radio frequency (RF) applications than for digital applications …
(FoMs) are more complex for radio frequency (RF) applications than for digital applications …
Review of SiGe HBTs on SOI
This paper reviews progress in SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-
Insulator (SOI) technology. SiGe HBTs on SOI are attractive for mixed signal radio frequency …
Insulator (SOI) technology. SiGe HBTs on SOI are attractive for mixed signal radio frequency …