Dislocations in crystalline silicon solar cells

L Wang, J Liu, Y Li, G Wei, Q Li, Z Fan… - Advanced Energy …, 2024 - Wiley Online Library
Dislocation is a common extended defect in crystalline silicon solar cells, which affects the
recombination characteristics of solar cells by forming deep‐level defect states in the silicon …

Seed‐assisted growth of cast‐mono silicon for photovoltaic application: challenges and strategies

P Wang, C Cui, D Yang, X Yu - Solar Rrl, 2020 - Wiley Online Library
Silicon has dominated the photovoltaic material market for a few decades. In contrast to
perfectly crystallized Czochralski (CZ) silicon, casting multi‐crystalline silicon attracts much …

External gettering of metallic impurities by black silicon layer

G Ayvazyan, L Hakhoyan, K Ayvazyan… - … status solidi (a), 2023 - Wiley Online Library
Black silicon (b‐Si) has many attractive properties and is currently being adopted in various
fields of semiconductor technology. It is shown here that b‐Si during thermal activation may …

An insight into dislocation density reduction in multicrystalline silicon

S Woo, M Bertoni, K Choi, S Nam, S Castellanos… - Solar Energy Materials …, 2016 - Elsevier
Dislocations can severely limit the conversion efficiency of multicrystalline silicon (mc-Si)
solar cells by reducing minority carrier lifetime. As cell performance becomes increasingly …

Influence of dislocation strain fields on the diffusion of interstitial iron impurities in silicon

B Ziebarth, M Mrovec, C Elsässer, P Gumbsch - Physical Review B, 2015 - APS
The efficiency of silicon (Si)-based solar cells is strongly affected by crystal defects and
impurities. Metallic impurities, in particular interstitial iron (Fe) atoms, cause large electric …

Variation of dislocation etch-pit geometry: An indicator of bulk microstructure and recombination activity in multicrystalline silicon

S Castellanos, M Kivambe, J Hofstetter… - Journal of Applied …, 2014 - pubs.aip.org
Dislocation clusters in multicrystalline silicon limit solar cell performance by decreasing
minority carrier diffusion length. Studies have shown that the recombination strength of …

Etch Pit Density Reduction in POCl3 and Atmospheric Pressure Chemical Vapor Deposition‐Gettered mc‐Si

M Fleck, A Zuschlag, G Hahn - physica status solidi (a), 2019 - Wiley Online Library
Herein, the effects of gettering, temperature, dopant concentration, and metal contamination
on the etch pit density (EPD) of an mc‐Si material are studied. It is demonstrated that there is …

Investigation of lifetime-limiting defects after high-temperature phosphorus diffusion in high-iron-content multicrystalline silicon

DP Fenning, AS Zuschlag, J Hofstetter… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
Phosphorus diffusion gettering of multicrystalline silicon solar cell materials generally fails to
produce material with minority-carrier lifetimes that approach that of gettered …

Nano-XRF analysis of metal impurities distribution at PL active grain boundaries during mc-silicon solar cell processing

S Bernardini, S Johnston, B West… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
Metal impurities are known to hinder the performance of commercial Si-based solar cells by
inducing bulk recombination, increasing leakage current, and causing direct shunting …

Predicting solar cell efficiencies from bulk lifetime images of multicrystalline silicon bricks

B Mitchell, H Wagner, PP Altermatt, T Trupke - Energy Procedia, 2013 - Elsevier
We present a model for predicting the solar cell efficiency potential of multicrystalline silicon
bricks prior to sawing. Three model inputs are required: bulk lifetime images from the side …