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Origin of improved luminescence efficiency after annealing of Ga (In) NAs materials grown by molecular-beam epitaxy
Positron-annihilation measurements and nuclear reaction analysis [utilizing the N 14 (d, p) N
15 and N 14 (d, He) C 12 reactions] in conjunction with Rutherford backscattering …
15 and N 14 (d, He) C 12 reactions] in conjunction with Rutherford backscattering …
Rapid thermal processing of magnetic materials
The rapid thermal processing (RTP) technique features dynamic control of temperature,
which permits high heating and cooling rates that cannot be reached with conventional …
which permits high heating and cooling rates that cannot be reached with conventional …
Evolution of nonlinear stationary formations in a quantum plasma at finite temperature
In this paper we have studied the gradual evolution of stationary formations in electron
acoustic waves at a finite temperature quantum plasma. We have made use of Quantum …
acoustic waves at a finite temperature quantum plasma. We have made use of Quantum …
Effect of annealing on the In and N distribution in InGaAsN quantum wells
We analyze the influence of annealing on compositional fluctuations in InGaAsN quantum
wells by means of composition-sensitive high-resolution transmission electron microscopy …
wells by means of composition-sensitive high-resolution transmission electron microscopy …
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration
We have investigated the optical transitions in Ga 1− y In y N x As 1− x/GaAs single and
multiple quantum wells using photovoltaic measurements at room temperature. From a …
multiple quantum wells using photovoltaic measurements at room temperature. From a …
Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser
T He, S Liu, W Li, L Zhong, X Ma, C **ong… - Journal of …, 2023 - iopscience.iop.org
Output power and reliability are the most important characteristic parameters of
semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs …
semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs …
8-band and 14-band kp modeling of electronic band structure and material gain in Ga (In) AsBi quantum wells grown on GaAs and InP substrates
The electronic band structure and material gain have been calculated for GaAsBi/GaAs
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …
Optical properties of GaNAs and GaInAsN quantum wells
We present an overview of our optical characterization work on dilute nitride quantum well
(QW) samples. A simple model for calculating interband transition energies is constructed …
(QW) samples. A simple model for calculating interband transition energies is constructed …
Recent developments in metastable dilute-N III–V semiconductors
PJ Klar - Progress in Solid State Chemistry, 2003 - Elsevier
Metastable III–N–V semiconductors are a subgroup of a recently discovered new class of III–
V and II–VI semiconductor alloys. Band gap engineering is achieved in these alloys by …
V and II–VI semiconductor alloys. Band gap engineering is achieved in these alloys by …
Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
We have investigated by photoluminescence spectroscopy and x-ray diffraction the
influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga …
influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga …