A switching of resistive memory cells leads to a local accumulation of Joules heat in the
device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via …

Abstract Two-dimensional (2D) MXenes have gained extensive attention in the field of
memristors due to their high ion mobility, chemical stability and tunable electrical and …

In this paper, we present a compact memristor model for bipolar neuromorphic ReRAM
devices. The proposed model focuses on the high level description of the device, and it …

In spite of the apparent simplicity of the system under study, compact modeling of
complementary resistive switching (CRS) devices, ie, two antiserially connected memristive …

Pattern recognition is a critical aspect of modern computing and artificial intelligence,
enabling robotic and computing systems to classify and categorize information based on its …

We report on non-volatile memory devices based on multifunctional manganites. The
electric field induced resistive switching of Ti/La 1/3 Ca 2/3 MnO 3/n-Si devices is explored …

This paper proposes two different approaches to studying resistive switching of oxide thin
films using scratching probe nanolithography of atomic force microscopy (AFM). These …

Herein, the physical properties of HfO2 thin films such as crystal structure, chemical
composition, transmissivity, and bandgap along with a comprehensive analytical model are …

Nanowires, atomic point contacts, and chains of atoms are one-dimensional nanostructures,
which display size-dependent quantum effects in electrical and thermal conductivity. In this …

When a memory cell of a Resistive Random Access Memory (ReRAM) crossbar array is
switched repeatedly, a considerable amount of Joule heat is dissipated in the cell, and the …