Conceived over 30 years ago, photoconductive (PC) emitters have proved essential in the
development and spread of terahertz technology. Since then, not only have they been used …

Generation and measurement of ultrashort, subpicosecond pulses of electromagnetic
radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency …

We report a giant bowing of the spin-orbit splitting energy Δ 0 in the dilute GaAs 1-x Bi x
alloy for Bi concentrations ranging from 0% to 1.8%. This is the first observation of a large …

We show that the band gap bowing trends observed in III-V alloys containing dilute
concentrations of Sb or Bi can be explained within the framework of the valence-band …

The optical properties of Ga Bi x As 1− x (0.04< x< 0.08) grown by molecular beam epitaxy
have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …

The GaBi x As 1− x bismide III-V semiconductor system remains a relatively underexplored
alloy particularly with regards to its detailed electronic band structure. Of particular …

We have performed ab initio self-consistent calculations based on the full potential linear
augmented plane-wave method with the generalized gradient approximation to investigate …

We show through band structure calculations that III-V-Bi alloys, emerging as a new class of
semiconductor materials, differ nontrivially from their counterparts III-VN alloys which have …