Since the discovery of Rochelle salt a century ago, ferroelectric materials have been
investigated extensively due to their robust responses to electric, mechanical, thermal …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …

Topological spin/polarization structures in ferroic materials continue to draw great attention
as a result of their fascinating physical behaviors and promising applications in the field of …

A quantum spin hall insulator is manifested by its conducting edge channels that originate
from the nontrivial topology of the insulating bulk states. Monolayer 1 T′-WTe 2 exhibits this …

This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …

Electronic correlations give rise to fascinating macroscopic phenomena such as
superconductivity, magnetism, and topological phases of matter. Although these …

Magnetic field-induced changes in the electrical resistance of materials reveal insights into
the fundamental properties governing their electronic and magnetic behavior. Various …

Symmetry‐imposed restrictions on the number of available pyroelectric and piezoelectric
materials remain a major limitation as 22 out of 32 crystallographic material classes exhibit …

Numerous of the greatest inventions in modern society, such as solar cells, display panels,
and transistors, rely on a simple concept: An external stimulus is applied to a material and …