Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
Power semiconductor devices are utilized as solid-state switches in power electronics
systems, and their overarching design target is to minimize the conduction and switching …
systems, and their overarching design target is to minimize the conduction and switching …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
Progress in performance of AlGaN‐based ultraviolet light emitting diodes
J Lang, F Xu, J Wang, L Zhang, X Fang… - Advanced Electronic …, 2025 - Wiley Online Library
AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury
(Hg) pollution free, small size, high efficiency, and so on, and are widely used in military …
(Hg) pollution free, small size, high efficiency, and so on, and are widely used in military …
First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlGa)O alloys
JB Varley - Journal of Materials Research, 2021 - Springer
Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …
numerous structural phases with unique optoelectronic properties that make them attractive …
[HTML][HTML] The role of chemical potential in compensation control in Si: AlGaN
Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical
potential control (CPC). The chemical potentials and the resulting formation energies of …
potential control (CPC). The chemical potentials and the resulting formation energies of …
High-temperature performance of AlN MESFETs with epitaxially grown n-type AlN channel layers
M Hiroki, Y Taniyasu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
We fabricated AlN metal semiconductor field effect transistors (MESFETs) with an epitaxially
grown n-type AlN channel layer and characterized the temperature dependence of their …
grown n-type AlN channel layer and characterized the temperature dependence of their …