Materials for high-temperature digital electronics

DK Pradhan, DC Moore, AM Francis… - Nature Reviews …, 2024 - nature.com
Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

Open-loop analog programmable electrochemical memory array

P Chen, F Liu, P Lin, P Li, Y **ao, B Zhang… - Nature …, 2023 - nature.com
Emerging memories have been developed as new physical infrastructures for hosting neural
networks owing to their low-power analog computing characteristics. However, accurately …

Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing

H Kwak, N Kim, S Jeon, S Kim, J Woo - Nano Convergence, 2024 - Springer
Artificial neural networks (ANNs), inspired by the human brain's network of neurons and
synapses, enable computing machines and systems to execute cognitive tasks, thus …

Dielectric-engineered high-speed, low-power, highly reliable charge trap flash-based synaptic device for neuromorphic computing beyond inference

JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim… - Nano Letters, 2023 - ACS Publications
The coming of the big-data era brought a need for power-efficient computing that cannot be
realized in the Von Neumann architecture. Neuromorphic computing which is motivated by …

On-chip integrated atomically thin 2D material heater as a training accelerator for an electrochemical random-access memory synapse for neuromorphic computing …

RD Nikam, J Lee, W Choi, D Kim, H Hwang - ACS nano, 2022 - ACS Publications
An artificial synapse based on oxygen-ion-driven electrochemical random-access memory
(O-ECRAM) devices is a promising candidate for building neural networks embodied in …

Intercalation of functional materials with phase transitions for neuromorphic applications

X He, H Wang, J Sun, X Zhang, K Chang, F Xue - Matter, 2025 - cell.com
The introduction of foreign ions, atoms, or molecules into emerging functional materials is
crucial for manipulating the physical properties of materials and innovating device …

WOx channel engineering of Cu-ion-driven synaptic transistor array for low-power neuromorphic computing

S Jeon, H Kang, H Kwak, K Noh, S Kim, N Kim… - Scientific Reports, 2023 - nature.com
The multilevel current states of synaptic devices in artificial neural networks enable next-
generation computing to perform cognitive functions in an energy-efficient manner …

Bypass Resistive RAM with Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications

G Han, K Lee, D Kim, Y Seo, J Lee… - IEEE Electron …, 2023 - ieeexplore.ieee.org
We report a bypass resistive random-access memory (B-RRAM), which combines interface
switching-based RRAM and an IGZO transistor, providing high compatibility with a vertical …