The development of integrated circuits based on two-dimensional materials

K Zhu, C Wen, AA Aljarb, F Xue, X Xu, V Tung… - Nature …, 2021 - nature.com
Abstract Two-dimensional (2D) materials could potentially be used to develop advanced
monolithic integrated circuits. However, despite impressive demonstrations of single devices …

2D semiconductors for specific electronic applications: from device to system

X Huang, C Liu, P Zhou - npj 2D Materials and Applications, 2022 - nature.com
The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …

Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

AJ Yang, K Han, K Huang, C Ye, W Wen, R Zhu… - Nature …, 2022 - nature.com
Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

Two-dimensional transition metal dichalcogenides: interface and defect engineering

Z Hu, Z Wu, C Han, J He, Z Ni, W Chen - Chemical Society Reviews, 2018 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

Materials science challenges to graphene nanoribbon electronics

V Saraswat, RM Jacobberger, MS Arnold - ACS nano, 2021 - ACS Publications
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

A general one-step plug-and-probe approach to top-gated transistors for rapidly probing delicate electronic materials

L Wang, P Wang, J Huang, B Peng, C Jia… - Nature …, 2022 - nature.com
The miniaturization of silicon-based electronics has motivated considerable efforts in
exploring new electronic materials, including two-dimensional semiconductors and halide …

[PDF][PDF] High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer

J Wang, Q Yao, CW Huang, X Zou, L Liao… - Advanced …, 2016 - researchgate.net
DOI: 10.1002/adma. 201602757 significantly shifts the threshold voltage and can only dope
the entire MoS 2 flake.[21, 26] Additionally, graphene could be also used as electrode to …

A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film

K Liu, B **, W Han, X Chen, P Gong, L Huang… - Nature …, 2021 - nature.com
Van der Waals dielectrics, such as hexagonal boron nitride, are widely used to preserve the
intrinsic properties of two-dimensional semiconductors in electronic devices. However …

Gate dielectrics integration for 2D electronics: challenges, advances, and outlook

S Yang, K Liu, Y Xu, L Liu, H Li, T Zhai - Advanced Materials, 2023 - Wiley Online Library
Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …

Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering

S Sovizi, S Angizi, SA Ahmad Alem, R Goodarzi… - Chemical …, 2023 - ACS Publications
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …