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Emerging 2D memory devices for in‐memory computing
L Yin, R Cheng, Y Wen, C Liu, J He - Advanced Materials, 2021 - Wiley Online Library
It is predicted that the conventional von Neumann computing architecture cannot meet the
demands of future data‐intensive computing applications due to the bottleneck between the …
demands of future data‐intensive computing applications due to the bottleneck between the …
A review on recent advances of chemical vapor deposition technique for monolayer transition metal dichalcogenides (MX2: Mo, W; S, Se, Te)
Transition metal dichalcogenide (TMD) monolayers have recently garnered significant
attention owing to their favorable electronic and optoelectronic properties. To date, chemical …
attention owing to their favorable electronic and optoelectronic properties. To date, chemical …
Programmable graded do** for reconfigurable molybdenum ditelluride devices
Non-volatile reconfigurable devices have the potential to improve integration levels and
lower power consumption in next-generation electronics. Two-dimensional semiconductors …
lower power consumption in next-generation electronics. Two-dimensional semiconductors …
Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides
With advances in exfoliation and synthetic techniques, atomically thin films of
semiconducting transition metal dichalcogenides have recently been isolated and …
semiconducting transition metal dichalcogenides have recently been isolated and …
Artificial synapses based on multiterminal memtransistors for neuromorphic application
Inspired by the human brain, neuromorphic computing on the hardware level is a data
processing model that could address the inherent energy and throughput limitations of …
processing model that could address the inherent energy and throughput limitations of …
Electrical characterization of 2D materials-based field-effect transistors
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …
conventional semiconductor technologies face serious limitations in performance and power …
Hysteresis in the transfer characteristics of MoS2 transistors
We investigate the origin of the hysteresis observed in the transfer characteristics of back-
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
Neurotransmitter release in chemical synapses is fundamental to diverse brain functions
such as motor action, learning, cognition, emotion, perception, and consciousness …
such as motor action, learning, cognition, emotion, perception, and consciousness …
Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors
Efficient do** for modulating electrical properties of two-dimensional (2D) transition metal
dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements …
dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements …
Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays
2D Molybdenum disulfide (MoS2) is a promising candidate material for high‐speed and
flexible optoelectronic devices, but only with low photoresponsivity. Here, a large …
flexible optoelectronic devices, but only with low photoresponsivity. Here, a large …