Emerging 2D memory devices for in‐memory computing

L Yin, R Cheng, Y Wen, C Liu, J He - Advanced Materials, 2021 - Wiley Online Library
It is predicted that the conventional von Neumann computing architecture cannot meet the
demands of future data‐intensive computing applications due to the bottleneck between the …

A review on recent advances of chemical vapor deposition technique for monolayer transition metal dichalcogenides (MX2: Mo, W; S, Se, Te)

FG Aras, A Yilmaz, HG Tasdelen, A Ozden, F Ay… - Materials Science in …, 2022 - Elsevier
Transition metal dichalcogenide (TMD) monolayers have recently garnered significant
attention owing to their favorable electronic and optoelectronic properties. To date, chemical …

Programmable graded do** for reconfigurable molybdenum ditelluride devices

R Peng, Y Wu, B Wang, R Shi, L Xu, T Pan, J Guo… - Nature …, 2023 - nature.com
Non-volatile reconfigurable devices have the potential to improve integration levels and
lower power consumption in next-generation electronics. Two-dimensional semiconductors …

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks… - ACS …, 2014 - ACS Publications
With advances in exfoliation and synthetic techniques, atomically thin films of
semiconducting transition metal dichalcogenides have recently been isolated and …

Artificial synapses based on multiterminal memtransistors for neuromorphic application

L Wang, W Liao, SL Wong, ZG Yu, S Li… - Advanced Functional …, 2019 - Wiley Online Library
Inspired by the human brain, neuromorphic computing on the hardware level is a data
processing model that could address the inherent energy and throughput limitations of …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

Hysteresis in the transfer characteristics of MoS2 transistors

A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo… - 2D …, 2017 - iopscience.iop.org
We investigate the origin of the hysteresis observed in the transfer characteristics of back-
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors

AJ Arnold, A Razavieh, JR Nasr, DS Schulman… - ACS …, 2017 - ACS Publications
Neurotransmitter release in chemical synapses is fundamental to diverse brain functions
such as motor action, learning, cognition, emotion, perception, and consciousness …

Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors

J Jang, JK Kim, J Shin, J Kim, KY Baek, J Park… - Science …, 2022 - science.org
Efficient do** for modulating electrical properties of two-dimensional (2D) transition metal
dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements …

Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays

J Miao, W Hu, Y **g, W Luo, L Liao, A Pan, S Wu… - small, 2015 - Wiley Online Library
2D Molybdenum disulfide (MoS2) is a promising candidate material for high‐speed and
flexible optoelectronic devices, but only with low photoresponsivity. Here, a large …