A gas injection system, a reactor system including the gas injection system, and methods of
using the gas injection system and reactor system are disclosed. The gas injection system …

H01L21/02263—Forming insulating materials on a substrate characterised by the process
for the formation of the insulating layer formation by a deposition process deposition from the …

2019-08-30 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

D56, 051 S 2,059,480 A 2,161,626 A 2,240,163 A 2,266,416 A 2,280,778 A D142, 841 S
2,410,420 A 2,441,253 A 2,480,557 A 2,563,931 A 2,660,061 A 2,745,640 A 2,847,320 A …

A gas-phase chemical reactor, a system including the reac tor, and methods of using the
reactor and system are dis closed. An exemplary reactor includes a reaction chamber and is …

(57) ABSTRACT A reactor for processing substrates and methods for manu facturing and
using the reactor are disclosed. Specifically, the reactor can include a material that forms …

2018-03-09 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …

(54) METHOD OF FORMING A GERMANIUM OXYNITRIDE FILM 21/0228; HO1L 29/40117;
HOIL 29/66833; HO1L 21/285; HO1L 27/11582;

Primary Examiner Lan Vinh (57) ABSTRACT The invention relates to a substrate rack and a
substrate processing system for processing substrates in a reaction chamber. The substrate …