[HTML][HTML] Low contact resistivity at the 10− 4 Ω cm2 level fabricated directly on n-type AlN
Ultrawide bandgap aluminum nitride (AlN) stands out as a highly attractive material for high-
power electronics. However, AlN power devices face performance challenges due to high …
power electronics. However, AlN power devices face performance challenges due to high …
Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content
The effects of thermal annealing on V‐based electrodes (V/Al/X/Au) with different diffusion
barrier metal X are investigated for n‐type Al0. 7Ga0. 3N. At an annealing temperature of …
barrier metal X are investigated for n‐type Al0. 7Ga0. 3N. At an annealing temperature of …
Application of TiO2/Ag/TiO2 as an Ohmic Contact to an AlGaAs Layer in a GaAs Solar Cell
This paper investigates the possibility of using a nanolaminate TiO2/Ag/TiO2 structure as a
transparent conductive coating on GaAs solar cells. A novel result is that this structure forms …
transparent conductive coating on GaAs solar cells. A novel result is that this structure forms …
Impact of Plasma Treatment of n-Al0.87Ga0.13N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs
HK Cho, J Rass, A Mogilatenko… - IEEE Photonics …, 2023 - ieeexplore.ieee.org
We investigated the effect of treating the surface of n-Al 0.87 Ga 0.13 N: Si by O 2 or SF 6
plasma on the properties of subsequently deposited and annealed V/Al/Ni/Au contacts …
plasma on the properties of subsequently deposited and annealed V/Al/Ni/Au contacts …
Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN
XQ Guo, FJ Xu, J Lang, JM Wang, LS Zhang… - Applied Physics …, 2024 - pubs.aip.org
Influence of the barrier layer on the electrical properties of V/Al-based Ohmic contact is
investigated by comparing the surface morphology and alloying results of V/Al/Ni/Au (with …
investigated by comparing the surface morphology and alloying results of V/Al/Ni/Au (with …
Au-free V/Al/Pt Contacts on n-Al0. 85Ga0. 15N: Si Surfaces of Far-UVC LEDs
HK Cho, I Ostermay, T Kolbe, J Rass… - ECS Journal of Solid …, 2024 - iopscience.iop.org
The feasibility of replacing the V/Al/Ni/Au contact on n-Al 0.85 Ga 0.15 N: Si commonly used
in far-UVC LEDs with a Au-free V/Al/Pt contact has been investigated. It is shown that the V …
in far-UVC LEDs with a Au-free V/Al/Pt contact has been investigated. It is shown that the V …
Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs
A Baratov, T Igarashi, M Ishiguro… - Japanese Journal of …, 2023 - iopscience.iop.org
We report on the highly improved performance of Al 2 O 3/AlGaN/GaN MIS-HEMTs using a
V/Al/Mo/Au metal stack as ohmic electrodes. Transfer length method test structures using a …
V/Al/Mo/Au metal stack as ohmic electrodes. Transfer length method test structures using a …
Measurement and control of semiconductor-insulator interface state density in AlGaN/GaN MIS-HEMTs
AN Baratov - 2024 - u-fukui.repo.nii.ac.jp
Background In the dawn of integrated circuits, the famous prediction by Gordon E. Moore
was made:“The complexity for minimum component costs has in-creased at a rate of roughly …
was made:“The complexity for minimum component costs has in-creased at a rate of roughly …
AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/Mo/Au ohmic contacts
T Igarashi, S Maeda, A Baratov… - … Meeting for Future of …, 2023 - ieeexplore.ieee.org
We have fabricated and characterized AlGaN/GaN Schottky-Gate HEMTs using V/Al/Mo/Au
metal stack for drain and source ohmic electrodes. The metal stack was annealed at …
metal stack for drain and source ohmic electrodes. The metal stack was annealed at …