Roadmap on quantum nanotechnologies

A Laucht, F Hohls, N Ubbelohde… - …, 2021 - iopscience.iop.org
Quantum phenomena are typically observable at length and time scales smaller than those
of our everyday experience, often involving individual particles or excitations. The past few …

Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction

S Studenikin, M Korkusinski, A Bogan… - Semiconductor …, 2021 - iopscience.iop.org
There is rapidly expanding interest in exploiting the spin of valence-band holes rather than
conduction-band electrons for spin qubit semiconductor circuits composed of coupled …

Angular momentum transfer from photon polarization to an electron spin in a gate-defined quantum dot

T Fujita, K Morimoto, H Kiyama, G Allison… - Nature …, 2019 - nature.com
Gate-defined quantum dots (QDs) are such a highly-tunable quantum system in which single
spins can be electrically coupled, manipulated, and measured. However, the spins in gate …

Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots

D Huber, BU Lehner, D Csontosová, M Reindl… - Physical Review B, 2019 - APS
We present a detailed investigation of different excitonic states weakly confined in single
GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we …

Coherence characteristics of a GaAs single heavy-hole spin qubit using a modified single-shot latching readout technique

V Marton, A Sachrajda, M Korkusinski, A Bogan… - Nanomaterials, 2023 - mdpi.com
We present an experimental study of the coherence properties of a single heavy-hole spin
qubit formed in one quantum dot of a gated GaAs/AlGaAs double quantum dot device. We …

Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot

S Studenikin, M Korkusinski, M Takahashi… - Communications …, 2019 - nature.com
Electrical tunability of the g-factor of a confined spin is a long-time goal of the spin qubit field.
Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs …

Characterization of dot-specific and tunable effective factors in a GaAs/AlGaAs double quantum dot single-hole device

A Padawer-Blatt, J Ducatel, M Korkusinski, A Bogan… - Physical Review B, 2022 - APS
Difference in g factors in multidot structures can form the basis of dot-selective spin
manipulation under global microwave irradiation. Employing electric dipole spin resonance …

Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination

T Fujita, R Hayashi, M Kohda, J Ritzmann… - Journal of Applied …, 2021 - pubs.aip.org
Persistent photoconductivity of GaAs/AlGaAs heterostructures has hampered the
measurement of charge-and spin-related quantum effects in gate-defined quantum devices …

Stable electroluminescence in ambipolar dopant-free lateral p–n junctions

L Tian, F Sfigakis, A Shetty, HS Kim… - Applied Physics …, 2023 - pubs.aip.org
Dopant-free lateral p–n junctions in the GaAs/AlGaAs material system have attracted interest
due to their potential use in quantum optoelectronics (eg, optical quantum computers or …

Detection of photogenerated single electrons in a lateral quantum dot with a surface plasmon antenna

R Fukai, Y Sakai, T Fujita, H Kiyama… - Applied Physics …, 2021 - iopscience.iop.org
Electron spins in gate-defined lateral quantum dots (QDs) are a suitable platform for qubits
and have the capacity for coherent coupling to free-space photons. Superposition state …