Fermi-level depinning of Ge surface using hydrogen plasma-immersion ion implantation
Hydrogen plasma immersion ion implantation (PIII) has been demonstrated for alleviating
Fermi-level pinning in Al/Ge junctions. The Al metal contacts with n-and p-type Ge without …
Fermi-level pinning in Al/Ge junctions. The Al metal contacts with n-and p-type Ge without …
The (R) evolution of the junctionless transistor
R Duffy - ECS Transactions, 2016 - iopscience.iop.org
In the junctionless transistor [1] the do** type and concentration in the channel region is
essentially equal to that in the source and drain, or at least to that in the source and drain …
essentially equal to that in the source and drain, or at least to that in the source and drain …
Regrowth of Ge with different degrees of damage under thermal and athermal treatment
In this report, the recrystallization of pre-damaged Ge samples is extensively investigated
under steady-state thermal annealing and ultrafast thermal spike-assisted annealing …
under steady-state thermal annealing and ultrafast thermal spike-assisted annealing …
Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment
Radio-frequency (RF) hydrogen plasma treatment, thermal annealing in a furnace, and rapid
thermal annealing of high-dose P+ ion implanted p-type Ge layers have been studied by …
thermal annealing of high-dose P+ ion implanted p-type Ge layers have been studied by …
RF Plasma Monolayer Do** of Si Nanowires
For the first time a combination of monolayer do** with RF plasma treatment was used for
low-temperature do** of Si nanowires (NW). To study the do** effect, the back-gate …
low-temperature do** of Si nanowires (NW). To study the do** effect, the back-gate …
Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs
YV Gomeniuk, YY Gomeniuk… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In this paper, we study the effect of low-temperature RF plasma treatment in forming gas
(10% H 2+ 90% N 2) on the electrical characteristics of junctionless MOSFETs with n-In 0.53 …
(10% H 2+ 90% N 2) on the electrical characteristics of junctionless MOSFETs with n-In 0.53 …
Hydrogen plasma modification of shallow implanted Germanium layers
RF hydrogen plasma treatment, rapid thermal annealing and thermal annealing of high-
dose implanted amorphized p-type Ge layers have been studied by Raman scattering …
dose implanted amorphized p-type Ge layers have been studied by Raman scattering …