The technological evolution has been progressing for centuries and will possibly increase at
a higher rate in the 21st century. Currently, in this age of nanotechnology, the discovery of …

Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …

This review covers important advances in recent years in the physics of thin-film ferroelectric
oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film …

An overview of the state of art in ferroelectric thin films is presented. First, we review
applications: microsystems' applications, applications in high frequency electronics, and …

The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …

The great variability in the electrical properties of multinary oxide materials, ranging from
insulating, through semiconducting to metallic behaviour, has given rise to the idea of …

Single-or multi-layer transition metal oxides (TMOs) have a relatively longer history than
other atomically thin materials. TMOs comprise many earth-abundant minerals and have …

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic
orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …