We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC
substrate with a record power-gain cutoff frequency (f max). To achieve this high f max, we …

Technological advancement, the high cost of energy, and the continuous growing demands
of multitasking devices are the driving forces behind the huge market of compact …

AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising
candidates for a 5G communication system, which demands higher frequency and power …

The etch delay time commonly found during dry etching of AlGaN and GaN has been
experimentally proven to be due to the presence of hard–to–etch surface oxides. A BCl 3 …

Ohmic contact formation by Ti∕ Al∕ Mo∕ Au⁠, Mo∕ Al∕ Mo∕ Au⁠, and V∕ Al∕ Mo∕
Au on Al Ga N∕ Ga N heterostructure field effect transistor layers have been studied and …

In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching
patterns (OEPs)“fabricated to improve device radio frequency (RF) performance for Ka-band …

In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-
resistivity silicon. For achieving this, a strategy of uneven AlGaN/GaN was introduced …

A metallization scheme consisting of Ti/Al/Mo/Au was utilized to develop low‐resistance
ohmic contacts to AlGaN/GaN heterostructure field effect transistors (HFET). A contact …

The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au
metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated …

A systematic study of the selective etching of GaN over Al 0.28 Ga 0.72 N was performed
using Cl 2/N 2/O 2 inductively coupled plasmas (ICP). Highly selective etching at high GaN …