In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-
based ferroelectric field effect transistor devices for synaptic applications. The devices under …

Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant
attention has been devoted to studying hafnia-based ferroelectric material systems due to …

We propose that the post-deposition oxidation of the IGZO surface is essential for improving
the interface quality, with Al2O3 prepared by atomic layer deposition (ALD) employing a …

Ferroelectric (FE) field-effect transistors are interesting for their non-destructive readout
characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE …

Organic small molecule memristors show great potential in the application of low-energy
neuromorphic computing such as artificial synapses. In this study, based on the small …

Instigated by the plethora of data generated by edge devices and IoT devices, machine
learning has become the de facto choice of everyone for solving many tasks. Applications …

We investigate how the threshold voltage (VT) is adjusted to create a memory window (MW)
in ferroelectric field-effect transistors (FeFETs) composed of ferroelectric Hf0. 4Zr0. 6O2 and …

The versatility of hafnium oxide-based ferroelectric memories to function as a storage class
memory, a synaptic device for neuromorphic implementation, and a device capable of high …

In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO 2-
based ferroelectric field-effect transistor (FeFET) is investigated using technology computer …

The discovery of ferroelectricity in hafnium oxide (HfO 2) has proved to be a game changer
in the potential applications of ferroelectric non-volatile memories (NVM) in mainstream …