Ferroelectric field-effect transistors based on HfO2: a review
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
Progress and benchmark of spiking neuron devices and circuits
The sustainability of ever more sophisticated artificial intelligence relies on the continual
development of highly energy‐efficient and compact computing hardware that mimics the …
development of highly energy‐efficient and compact computing hardware that mimics the …
NiO resistive random access memory nanocapacitor array on graphene
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which
was on a Nb-doped SrTiO3 substrate containing terraces with a regular interval of about 100 …
was on a Nb-doped SrTiO3 substrate containing terraces with a regular interval of about 100 …
A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation
The scaling requirements of conventional DRAMs lead to the recent developments of
capacitorless single-transistor (1T) DRAM in SOI technology. We propose a new concept of …
capacitorless single-transistor (1T) DRAM in SOI technology. We propose a new concept of …
Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same
H Nakajima, K Inoh - US Patent 7,301,195, 2007 - Google Patents
A semiconductor memory device comprises a substrate; a semiconductor layer of a first
conductive type isolated from the substrate by an insulator layer; a memory transistor having …
conductive type isolated from the substrate by an insulator layer; a memory transistor having …
[BOOK][B] Digital integrated circuits: analysis and design
JE Ayers - 2003 - taylorfrancis.com
There is no field of enterprise today more dynamic or more challenging than Digital
Integrated Circuits. But because of its rapid development, the field has quickly outgrown …
Integrated Circuits. But because of its rapid development, the field has quickly outgrown …
Fully CMOS‐Based p‐Bits with a Bistable Resistor for Probabilistic Computing
Probabilistic computing can solve complex combinatorial optimization problems more
efficiently than conventional deterministic computing. A probabilistic bit (p‐bit) with an n‐p‐n …
efficiently than conventional deterministic computing. A probabilistic bit (p‐bit) with an n‐p‐n …
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
The band-modulation and sharp-switching mechanisms in Z 2-FET device operated as a
capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the …
capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the …
Simulation of intrinsic bipolar transistor mechanisms for future capacitor-less eDRAM on bulk substrate
R Pulicani, O Goducheau, H Degoirat… - 2010 17th IEEE …, 2010 - ieeexplore.ieee.org
Embedded DRAM technology is undergoing a radical evolution. With size reduction,
capacity shrink seems to be a complex obstacle to overcome. Alternative memory cells have …
capacity shrink seems to be a complex obstacle to overcome. Alternative memory cells have …
Double-gate junctionless 1T DRAM with physical barriers for retention improvement
In this article, a double-gate (DG) junction-less (JL) transistor with physical barriers is
proposed for one-transistor dynamic random-access memory (1T DRAM) application. In this …
proposed for one-transistor dynamic random-access memory (1T DRAM) application. In this …