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[HTML][HTML] Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN pin Solar Cell
Basic knowledge about the factors and mechanisms affecting the performance of solar cells
and their identification is essential when thinking of future improvements to the device …
and their identification is essential when thinking of future improvements to the device …
[HTML][HTML] Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Abstract Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been
proposed as suitable structures to be implemented in the optimal design of monolithic multi …
proposed as suitable structures to be implemented in the optimal design of monolithic multi …
Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
This work presents an investigation of the fully strained GaAsN/GaAs heterostructures
obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the …
obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the …
[HTML][HTML] Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells
V Donchev, M Milanova - Coatings, 2023 - mdpi.com
In this paper, we demonstrate the potential of the contactless surface photovoltage (SPV)
method for fast and reliable control of GaAs-based solar cells directly on epitaxial …
method for fast and reliable control of GaAs-based solar cells directly on epitaxial …
Analysis of photovoltaic cell output characteristic
X Zhou, Y Cui, H Xu - 2023 IEEE International Conference on …, 2023 - ieeexplore.ieee.org
Aiming at the output characteristics of photovoltaic cells, the mathematical model of
photovoltaic cells is established, which is further simplified into the equivalent circuit of …
photovoltaic cells is established, which is further simplified into the equivalent circuit of …
Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence
T Tsukasaki, H Sumikura, T Fujimoto, M Fujita… - Journal of Vacuum …, 2023 - pubs.aip.org
The optical properties of GaAsN system alloys have not been clarified, particularly for the
localized level around the bottom of the conduction band induced by nitrogen atoms. Herein …
localized level around the bottom of the conduction band induced by nitrogen atoms. Herein …
[HTML][HTML] Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
V Donchev, M Milanova, S Georgiev - Energies, 2022 - mdpi.com
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs
substrates were investigated in a comparative plan with a view of their possible application …
substrates were investigated in a comparative plan with a view of their possible application …
[PDF][PDF] Serafi nczuk
W Dawidowski, B Sciana, K Bielak… - chemical vapor …, 2003 - researchgate.net
Basic knowledge about the factors and mechanisms affecting the performance of solar cells
and their identification is essential when thinking of future improvements to the device …
and their identification is essential when thinking of future improvements to the device …
Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
MV Braza Blanco, T Ben Fernández, S Flores Gallegos… - 2022 - rodin.uca.es
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as
suitable structures to be implemented in the optimal design of monolithic multi-junction solar …
suitable structures to be implemented in the optimal design of monolithic multi-junction solar …
Efficiency Analysis of Solar Energy in Jilin Province Considering Uncertainty Factors
P Gao, J Ling, B Li, J Gao - 2023 2nd International Conference …, 2023 - ieeexplore.ieee.org
Solar energy, as a new type of green and clean energy, is one of the important technologies
for achieving carbon neutrality in China. However, due to various factors such as season …
for achieving carbon neutrality in China. However, due to various factors such as season …