[HTML][HTML] Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN pin Solar Cell

W Dawidowski, B Ściana, K Bielak, M Mikolášek… - Energies, 2021 - mdpi.com
Basic knowledge about the factors and mechanisms affecting the performance of solar cells
and their identification is essential when thinking of future improvements to the device …

[HTML][HTML] Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

V Braza, T Ben, S Flores, DF Reyes… - Applied Surface …, 2022 - Elsevier
Abstract Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been
proposed as suitable structures to be implemented in the optimal design of monolithic multi …

Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE

B Ściana, W Dawidowski, D Radziewicz, J Jadczak… - Energies, 2022 - mdpi.com
This work presents an investigation of the fully strained GaAsN/GaAs heterostructures
obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the …

[HTML][HTML] Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

V Donchev, M Milanova - Coatings, 2023 - mdpi.com
In this paper, we demonstrate the potential of the contactless surface photovoltage (SPV)
method for fast and reliable control of GaAs-based solar cells directly on epitaxial …

Analysis of photovoltaic cell output characteristic

X Zhou, Y Cui, H Xu - 2023 IEEE International Conference on …, 2023 - ieeexplore.ieee.org
Aiming at the output characteristics of photovoltaic cells, the mathematical model of
photovoltaic cells is established, which is further simplified into the equivalent circuit of …

Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence

T Tsukasaki, H Sumikura, T Fujimoto, M Fujita… - Journal of Vacuum …, 2023 - pubs.aip.org
The optical properties of GaAsN system alloys have not been clarified, particularly for the
localized level around the bottom of the conduction band induced by nitrogen atoms. Herein …

[HTML][HTML] Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications

V Donchev, M Milanova, S Georgiev - Energies, 2022 - mdpi.com
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs
substrates were investigated in a comparative plan with a view of their possible application …

[PDF][PDF] Serafi nczuk

W Dawidowski, B Sciana, K Bielak… - chemical vapor …, 2003 - researchgate.net
Basic knowledge about the factors and mechanisms affecting the performance of solar cells
and their identification is essential when thinking of future improvements to the device …

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

MV Braza Blanco, T Ben Fernández, S Flores Gallegos… - 2022 - rodin.uca.es
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as
suitable structures to be implemented in the optimal design of monolithic multi-junction solar …

Efficiency Analysis of Solar Energy in Jilin Province Considering Uncertainty Factors

P Gao, J Ling, B Li, J Gao - 2023 2nd International Conference …, 2023 - ieeexplore.ieee.org
Solar energy, as a new type of green and clean energy, is one of the important technologies
for achieving carbon neutrality in China. However, due to various factors such as season …