Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. I. Review and analysis of some basic problems
JC Balland, JP Zielinger, C Noguet… - Journal of Physics D …, 1986 - iopscience.iop.org
The use of photo-induced current transients as a means for the detection of deep trap**
levels in high-resistivity bulk materials and for the determination of their parameters is …
levels in high-resistivity bulk materials and for the determination of their parameters is …
Deep energy levels in CdTe and CdZnTe
A Castaldini, A Cavallini, B Fraboni… - Journal of applied …, 1998 - pubs.aip.org
The deep levels present in semiconducting CdTe and semi-insulating CdTe: Cl and Cd 0.8
Zn 0.2 Te have been investigated by means of cathodoluminescence, deep level transient …
Zn 0.2 Te have been investigated by means of cathodoluminescence, deep level transient …
Electronic structure and optoelectronic properties of Bismuth oxyiodide robust against percent‐level Iodine‐, Oxygen‐, and Bismuth‐related surface defects
In the search for nontoxic alternatives to lead‐halide perovskites, bismuth oxyiodide (BiOI)
has emerged as a promising contender. BiOI is air‐stable for over three months …
has emerged as a promising contender. BiOI is air‐stable for over three months …
Transient photoconductivity measurements in semi‐insulating GaAs. I. An analog approach
RE Kremer, MC Arikan, JC Abele… - Journal of applied …, 1987 - pubs.aip.org
An experimental arrangement is described by which emission coefficient behavior
associated with deep‐level traps in semi‐insulating GaAs can be surveyed, from the …
associated with deep‐level traps in semi‐insulating GaAs can be surveyed, from the …
Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II. Evaluation of various signal processing methods
JC Balland, JP Zielinger, M Tapiero… - Journal of Physics D …, 1986 - iopscience.iop.org
For pt. I see ibid., vol. 19, p. 57 (1986). The aim of the paper is to describe the principles and
the features of several signal processing methods suitable for exponential photocurrent …
the features of several signal processing methods suitable for exponential photocurrent …
Deep electron trap** center in Si‐doped InGaAlP grown by molecular‐beam epitaxy
S Nojima, H Tanaka, H Asahi - Journal of applied physics, 1986 - pubs.aip.org
The properties ofa deep electron trap** center found in Si-doped Iflo. sl Gao. 49_xA1xP
(x= 0.24) grown on Si-doped GaAs (100) substrates using molecular-beam epitaxy are …
(x= 0.24) grown on Si-doped GaAs (100) substrates using molecular-beam epitaxy are …
Deep energy levels and photoelectrical properties of thin cuprous oxide films
Thin films of cuprous oxide have been electrodeposited on molybdenum substrates. Some
preliminary photoelectrical properties of two devices with semitransparent aluminum and …
preliminary photoelectrical properties of two devices with semitransparent aluminum and …
Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor
MHY Seyidov, FA Mikailzade, T Uzun… - Physica B: Condensed …, 2016 - Elsevier
Unusual behavior of pyroelectric current signal polarity near the Curie point (T c) was
observed for TlGaSe 2 a ferroelectric-semiconductor. It has been revealed that the polarity of …
observed for TlGaSe 2 a ferroelectric-semiconductor. It has been revealed that the polarity of …
Intelligent measuring system for characterisation of defect centres in semi-insulating materials by photoinduced transient spectroscopy
M Pawłowski, P Kamiński, R Kozłowski… - Metrology and …, 2005 - infona.pl
An intelligent measurement system for the characterisation of defect centres in semi-
insulating materials is presented. The system utilises two-dimensional analysis of the …
insulating materials is presented. The system utilises two-dimensional analysis of the …
Phase transition of lipid multilamellar aqueous suspension under high pressure I. Investigation of phase diagram of dipalmitoyl phosphatidylcholine bimembrane by …
S Utoh, T Takemura - Japanese Journal of Applied Physics, 1985 - iopscience.iop.org
The pressure and temperature phase diagrams of DPPC bilayers have been obtained by
DTA and dilatometry. Under atmospheric pressure DPPC shows three phase transitions at …
DTA and dilatometry. Under atmospheric pressure DPPC shows three phase transitions at …