The novel use of a GaAs y P1–y/GaP compressively strained superlattice (CSS) to provide
enhanced control over misfit dislocation (MD) evolution and threading dislocation density …

Although selective area growth (SAG) and coalesced SAG (cSAG) have been utilized
extensively for many years to moderate the material quality of lattice-mismatched films, the …

In this work, heterojunctions of p-ZnTe: N/CdTe: Mg/n-CdTe: I/GaAs for photovoltaic and
photodiode application were grown epitaxially by using molecular beam system. Current …

GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates
such as GaAs allowing for the realization of several multijunction solar cell designs. This …

This work presents simulation results on a three-terminal two-junction design enabling a
monolithic GaNP/Si (2.0 eV/1.1 eV) tandem to achieve a practical efficiency of 32% under …

Molecular beam epitaxy was applied to evaporate a set of Au/ZnTe: I/CdTe: I/GaAs/In
heterostructures. The resulted heterostructures were examined for photovoltaic energy …

Photovoltaic (PV) energy has shown tremendous improvements in the past few decades
showing great promises for future sustainable energy sources. Among all PV energy …

Metamorphic epitaxial growth of III-V solar cells on Si has attracted significant interest for the
development of III-V/Si photovoltaic architectures. In this work, we present an alternative …

Growth of high material quality Aluminum Gallium Arsenide (Al x Ga 1-x As) is known to be
challenging, in particular with an Al content x above 20%. As a result, the use of Al x Ga 1-x …

Abstract Thin films of Se 80 Te 15 Ge 5 were prepared by thermal evaporation technique
onto a single-crystal p-Si substrate, and Au/Se 80 Te 15 Ge 5/p-Si/Al heterojunction was …