Every bit of information in a storage or memory device is bound by a multitude of
performance specifications, and is subject to a variety of reliability impediments. At the other …

A primary source of increased read time on NAND flash comes from the fact that, in the
presence of noise, the flash medium must be read several times using different read …

Non-volatile memories (NVMs) have emerged as the primary replacement of hard-disk
drives for a variety of storage applications, including personal electronics, mobile computing …

We extend the lifetime of Flash memory in embedded processors by exploiting the fact that
data from sensors is inherently analog. Prior work in the computer architecture community …

The evaluation of error correction code (ECC) for NAND flash memory is increasingly
complicated by the increasing bit error rate in memory. The concept of error-free information …

We construct error-correcting write-once memory (WOM) codes that guarantee correction of
any specified number of errors in q-level memories. The constructions use suitably designed …

Random I/O (RIO) codes, recently introduced by Sharon and Alrod, is a coding scheme to
improve the random input/output performance of flash memories. Multilevel flash memories …

In recent years, due to the spread of multi-level nonvolatile memories (NVMs), q-ary write-
once memory (WOM) codes have been extensively studied. By using WOM codes, it is …

In recent decades, the cost of acoustic technologies has declined dramatically. Advances in
networks, storage devices, and power management have made it practical to consider the …

In the framework of write-once memory (WOM) codes, it is important to distinguish between
codes that can be decoded directly and those that require the decoder to know the current …