Unexpected ultrafast and high adsorption of U (VI) and Eu (III) from solution using porous Al2O3 microspheres derived from MIL-53
S Huang, H Pang, L Li, S Jiang, T Wen… - Chemical Engineering …, 2018 - Elsevier
Uranium, a kind of strategic resource for nuclear energy, is inevitably released into
environment because of nuclear fuel fabrication and ore mining. Although numerous …
environment because of nuclear fuel fabrication and ore mining. Although numerous …
Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices
Redox-type resistive random access memories based on transition-metal oxides are studied
as adjustable two-terminal devices for integrated network applications beyond von …
as adjustable two-terminal devices for integrated network applications beyond von …
Nanostructured Co3O4 as a CO gas sensor: temperature-dependent behavior
S Vetter, S Haffer, T Wagner, M Tiemann - Sensors and Actuators B …, 2015 - Elsevier
Cobalt oxide spinel (Co 3 O 4) with an ordered nanostructure is used as a resistive gas
sensor for carbon monoxide (CO) in low ppm concentrations. The operating temperature has …
sensor for carbon monoxide (CO) in low ppm concentrations. The operating temperature has …
RRAMs based on anionic and cationic switching: a short overview
Resistive random access memories are emerging as a new type of memory that has the
potential to combine both the speed of volatile and the retention of nonvolatile memories. It …
potential to combine both the speed of volatile and the retention of nonvolatile memories. It …
Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5
The self-diffusivity of oxygen in amorphous Al 2 O 3 (a-Al 2 O 3), a-Ta 2 O 5, and a-Nb 2 O 5
was investigated along with structural analysis in terms of pair distribution function (PDF) …
was investigated along with structural analysis in terms of pair distribution function (PDF) …
Accelerated ionic motion in amorphous memristor oxides for nonvolatile memories and neuromorphic computing
R Schmitt, M Kubicek, E Sediva… - Advanced Functional …, 2019 - Wiley Online Library
Memristive devices based on mixed ionic–electronic resistive switches have an enormous
potential to replace today's transistor‐based memories and Von Neumann computing …
potential to replace today's transistor‐based memories and Von Neumann computing …
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Memristive switching devices are promising for future data storage and neuromorphic
computing applications to overcome the scaling and power dissipation limits of classical …
computing applications to overcome the scaling and power dissipation limits of classical …
Mechanistic insights into the origin of the oxygen migration barrier
Oxygen ion conductors require high temperatures to exhibit the high ion conductivity needed
for practical use. In this work, we related oxygen vacancy formation energy and migration …
for practical use. In this work, we related oxygen vacancy formation energy and migration …
Microstructures and performances of pressureless sintered MoSi2-Al2O3 composites
JB Huang, GH Zhang - Corrosion Science, 2023 - Elsevier
Abstract MoSi 2-Al 2 O 3 composites with various volume fractions of Al 2 O 3 from 0 to 40
vol% were fabricated by pressureless sintering at 1550℃. MoSi 2 powder was prepared by …
vol% were fabricated by pressureless sintering at 1550℃. MoSi 2 powder was prepared by …
Probing the reaction dynamics of thermite nanolaminates
GC Egan, EJ Mily, JP Maria… - The Journal of Physical …, 2015 - ACS Publications
Al/CuO reactive nanolaminate ignition was studied using temperature jump (T-Jump)
heating for rates greater than 105 K/s. Multilayer samples were sputter deposited onto thin …
heating for rates greater than 105 K/s. Multilayer samples were sputter deposited onto thin …