Unexpected ultrafast and high adsorption of U (VI) and Eu (III) from solution using porous Al2O3 microspheres derived from MIL-53

S Huang, H Pang, L Li, S Jiang, T Wen… - Chemical Engineering …, 2018 - Elsevier
Uranium, a kind of strategic resource for nuclear energy, is inevitably released into
environment because of nuclear fuel fabrication and ore mining. Although numerous …

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

H Zhang, S Yoo, S Menzel, C Funck… - … applied materials & …, 2018 - ACS Publications
Redox-type resistive random access memories based on transition-metal oxides are studied
as adjustable two-terminal devices for integrated network applications beyond von …

Nanostructured Co3O4 as a CO gas sensor: temperature-dependent behavior

S Vetter, S Haffer, T Wagner, M Tiemann - Sensors and Actuators B …, 2015 - Elsevier
Cobalt oxide spinel (Co 3 O 4) with an ordered nanostructure is used as a resistive gas
sensor for carbon monoxide (CO) in low ppm concentrations. The operating temperature has …

RRAMs based on anionic and cationic switching: a short overview

S Clima, K Sankaran, YY Chen… - physica status solidi …, 2014 - Wiley Online Library
Resistive random access memories are emerging as a new type of memory that has the
potential to combine both the speed of volatile and the retention of nonvolatile memories. It …

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

R Nakamura, T Toda, S Tsukui, M Tane… - Journal of applied …, 2014 - pubs.aip.org
The self-diffusivity of oxygen in amorphous Al 2 O 3 (a-Al 2 O 3), a-Ta 2 O 5, and a-Nb 2 O 5
was investigated along with structural analysis in terms of pair distribution function (PDF) …

Accelerated ionic motion in amorphous memristor oxides for nonvolatile memories and neuromorphic computing

R Schmitt, M Kubicek, E Sediva… - Advanced Functional …, 2019 - Wiley Online Library
Memristive devices based on mixed ionic–electronic resistive switches have an enormous
potential to replace today's transistor‐based memories and Von Neumann computing …

Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices

S Siegel, C Baeumer, A Gutsche… - Advanced electronic …, 2021 - Wiley Online Library
Memristive switching devices are promising for future data storage and neuromorphic
computing applications to overcome the scaling and power dissipation limits of classical …

Mechanistic insights into the origin of the oxygen migration barrier

D Vivona, K Gordiz, R Meyer, S Raman… - Journal of Materials …, 2024 - pubs.rsc.org
Oxygen ion conductors require high temperatures to exhibit the high ion conductivity needed
for practical use. In this work, we related oxygen vacancy formation energy and migration …

Microstructures and performances of pressureless sintered MoSi2-Al2O3 composites

JB Huang, GH Zhang - Corrosion Science, 2023 - Elsevier
Abstract MoSi 2-Al 2 O 3 composites with various volume fractions of Al 2 O 3 from 0 to 40
vol% were fabricated by pressureless sintering at 1550℃. MoSi 2 powder was prepared by …

Probing the reaction dynamics of thermite nanolaminates

GC Egan, EJ Mily, JP Maria… - The Journal of Physical …, 2015 - ACS Publications
Al/CuO reactive nanolaminate ignition was studied using temperature jump (T-Jump)
heating for rates greater than 105 K/s. Multilayer samples were sputter deposited onto thin …