Colloquium: Spintronics in graphene and other two-dimensional materials

A Avsar, H Ochoa, F Guinea, B Özyilmaz… - Reviews of Modern …, 2020 - APS
After the first unequivocal demonstration of spin transport in graphene [Tombros et al.,
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …

Optical properties of atomically thin transition metal dichalcogenides: observations and puzzles

M Koperski, MR Molas, A Arora, K Nogajewski… - …, 2017 - degruyter.com
Recent results on the optical properties of monolayer and few layers of semiconducting
transition metal dichalcogenides are reviewed. Experimental observations are presented …

k· p theory for two-dimensional transition metal dichalcogenide semiconductors

A Kormányos, G Burkard, M Gmitra, J Fabian… - 2D …, 2015 - iopscience.iop.org
We presentk p· Hamiltonians parametrized byab initiodensity functional theory calculations
to describe the dispersion of the valence and conduction bands at their extrema (theK, Q, Γ …

Gate-induced superconductivity in atomically thin MoS2 crystals

D Costanzo, S Jo, H Berger, AF Morpurgo - Nature nanotechnology, 2016 - nature.com
When thinned down to the atomic scale, many layered van der Waals materials exhibit an
interesting evolution of their electronic properties, whose main aspects can be accounted for …

Liquid exfoliation of black phosphorus nanosheets and its application as humidity sensor

DJ Late - Microporous and Mesoporous Materials, 2016 - Elsevier
The bulk crystal of black phosphorus was exfoliated by liquid exfoliation method for a
duration of 8 h using N-Methyl-2-Pyrrolidone as the solvent. The exfoliated sample was …

Valley polarization by spin injection in a light-emitting van der Waals heterojunction

OL Sanchez, D Ovchinnikov, S Misra, A Allain, A Kis - Nano letters, 2016 - ACS Publications
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at
different locations in the momentum space could be harnessed to build devices that operate …

Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation

RC Longo, R Addou, KC Santosh, JY Noh… - 2D …, 2017 - iopscience.iop.org
Layered transition metal dichalcogenides (TMDs) are being considered as a promising
alternative channel material in ultra-thin and low power nanoelectronics, due to the …

Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2

Z Wang, A Molina-Sanchez, P Altmann, D Sangalli… - Nano …, 2018 - ACS Publications
In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …

Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder

J Li, M Goryca, K Yumigeta, H Li, S Tongay… - Physical review …, 2021 - APS
Using time-resolved optical Kerr rotation, we measure the low-temperature valley dynamics
of resident electrons and holes in exfoliated WSe 2 monolayers as a systematic function of …

Three-particle complexes in two-dimensional semiconductors

B Ganchev, N Drummond, I Aleiner, V Fal'Ko - Physical review letters, 2015 - APS
We evaluate binding energies of trions X±, excitons bound by a donor or acceptor charge
XD (A), and overcharged acceptors or donors in two-dimensional atomic crystals by …