Silicon nanocrystals: size matters
J Heitmann, F Müller, M Zacharias… - Advanced …, 2005 - Wiley Online Library
This paper reviews new approaches to size‐controlled silicon‐nanocrystal synthesis. These
approaches allow narrowing of the size distribution of the nanocrystals compared with those …
approaches allow narrowing of the size distribution of the nanocrystals compared with those …
Ultralarge capacitance–voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam …
Amorphous silicon films are deposited by ion-beam-assisted electron beam deposition and
subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a …
subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a …
The present status of Si/SiO2 superlattice research into optoelectronic applications
T Zheng, Z Li - Superlattices and Microstructures, 2005 - Elsevier
Due to the potential applications in optoelectronic areas, Si/SiO2 superlattices have been
focused on extensively in the last few years. The work spans a wide range from theory to …
focused on extensively in the last few years. The work spans a wide range from theory to …
Resonant tunneling in partially disordered silicon nanostructures
Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals
separated in the growth direction by angstrom-thick SiO 2 layers exhibits entirely …
separated in the growth direction by angstrom-thick SiO 2 layers exhibits entirely …
Structure and luminescence of silicon nanocrystals embedded in SiO2
GG Ross, D Barba, F Martin - International journal of …, 2008 - inderscienceonline.com
According to the International Technology Roadmap for Semiconductors, there is no
manufacturable solution to address the increasing interconnection lengths in microelectronic …
manufacturable solution to address the increasing interconnection lengths in microelectronic …
Charge retention characteristics in a metal–insulator–semiconductor capacitor containing Ge nanocrystals
We investigate the charge retention characteristics in a metal–insulator–semiconductor
capacitor containing Ge nanocrystals (∼ 3 nm in diameter) using capacitance–voltage …
capacitor containing Ge nanocrystals (∼ 3 nm in diameter) using capacitance–voltage …
Controlled nucleation of silicon nanocrystals on a periodic template
This paper presents a successful unification of standard lithographic approaches (top down),
anisotropic etching of atomically smooth surfaces, and controlled crystallization of silicon …
anisotropic etching of atomically smooth surfaces, and controlled crystallization of silicon …
Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam …
Charge-storage effects in a metal-insulator-semi-conductor device containing germanium
(Ge) nano-crystals were investigated. The Ge nano-crystals were formed by rapid thermal …
(Ge) nano-crystals were investigated. The Ge nano-crystals were formed by rapid thermal …
Charge retention effect in metal–oxide–semiconductor structure containing Si nanocrystals prepared by ion-beam-assisted electron beam deposition
Y Kim, KH Park, WC Choi, TH Chung, HJ Bark… - Materials Science and …, 2001 - Elsevier
An amorphous Si layer prepared by ion-beam-assisted electron beam deposition (IBAED)
method is oxidized by a rapid thermal oxidation technique. We observe a nanocrystal band …
method is oxidized by a rapid thermal oxidation technique. We observe a nanocrystal band …
Investigation of nc-Si inclusions in multilayer a-Si: H films obtained using the layer by layer technique
AS Gudovskikh, JP Kleider, VP Afanasjev… - Journal of non …, 2004 - Elsevier
The development of the nanocrystalline silicon inclusions in homogeneous and multilayered
a-Si: H films was investigated by transmission electron microscopy (TEM). The …
a-Si: H films was investigated by transmission electron microscopy (TEM). The …