We present an in-depth analysis of the surface band alignment and local potential
distribution of InP nanowires containing ap–n junction using scanning probe and …

The atomic structures and the electronic states of active and inactive dopant sites in
semiconductor are elucidated successfully by using X-ray absorption near-edge structure …

Three dimensional GaN structures with different crystal facets and do** types have been
investigated employing the surface photo-voltage (SPV) method to monitor illumination …

DC-pulse magnetron sputtering was utilized to deposit a 300 nm-thick n-type GaN thin film
that was co-doped with Si–Sn onto an amorphous glass substrate with a ZnO buffer layer …

We investigated atomic structures and chemical states of active and inactive dopant sites for
Mg-and Si-doped in GaN using photoelectron holography and X-ray absorption near edge …

Organic and hybrid devices are very complex systems involving layers having very specific
electronic properties (semiconducting, isolating, dielectric materials). The efficiency of the …

Innovative design and materials are needed to satisfy the demand for efficient and scalable
devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar …

DC-pulse magnetron sputtering was used to deposit a 300-nm-thick Si–Sn codoped n-type
GaN film on an amorphous glass substrate with a ZnO buffer layer. Postgrowth thermal …

抄録 We have investigated the electronic states of active and inactive dopant sites in Si-
doped GaN using the X-ray absorption near-edge structure (XANES), Auger electron …