An accurate and broadband method for the direct extraction of heterojunction bipolar
transistor (HBT) small-signal model parameters is presented in this paper. This method …

A unique direct parameter extraction method for the small-signal equivalent-circuit model of
InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. S …

An improved direct parameter extraction method of SiGe heterojunction bipolar transistors
(HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-/spl pi/model is developed …

A parameter-extraction approach for the heterojunction bipolar transistor (HBT), which
combines the analytical approach and empirical optimization procedure, is developed. The …

An improved HBT small-signal parameter extraction procedure is presented in which all the
equivalent circuit elements are extracted analytically without reference to numerical …

This authoritative account of electronic and optoelectronic devices operating at frequencies
greater than 1 GHz covers the concepts and fundamental principles of operation, and …

Direct extraction is the most accurate method for the determination of equivalent-circuits of
heterojunction bipolar transistors (HBTs). The method is based on first determining the …

Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic
microwave integrated circuits (MMICs) are reported in this paper. These MMICs are …

A new heterojunction bipolar transistor (HBT) small-signal equivalent-circuit parameter-
extraction procedure employing multibias S-parameter data is presented. The algorithm …

A new direct extraction method to determine the parasitic capacitances for HBTs is
presented in this paper. The main advantage is that base parasitic capacitance Cpb can be …