Interdot carrier transfer in asymmetric bilayer InAs∕ GaAs quantum dot structures
Transient photoluminescence from a series of asymmetric InAs quantum-dot bilayers with a
GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot …
GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot …
Some aspects of exciton thermal exchange in InAs quantum dots coupled with InGaAs/GaAs quantum wells
TV Torchynska - Journal of Applied Physics, 2008 - pubs.aip.org
Photoluminescence (PL), its temperature and excitation power dependences, and PL
excitation spectra have been investigated in InAs quantum dots (QDs) embedded in In 0.15 …
excitation spectra have been investigated in InAs quantum dots (QDs) embedded in In 0.15 …
Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport
TS Shamirzaev, AM Gilinsky, AK Kalagin… - Semiconductor …, 2006 - iopscience.iop.org
The low-temperature steady-state and time-resolved photoluminescence (PL) from self-
assembled InAs quantum dots (QDs) embedded in AlAs with various densities of growth …
assembled InAs quantum dots (QDs) embedded in AlAs with various densities of growth …
Carrier transfer in vertically stacked quantum ring-quantum dot chains
The interplay between structural properties and charge transfer in self-assembled quantum
ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot …
ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot …
Experimental and theoretical study of thermally activated carrier transfer in InAs/GaAs multilayer quantum dots
In this paper, we have investigated the thermally activated carriers transfer mechanism in
closely stacked InAs/GaAs quantum dots (QDs) by means of steady-state …
closely stacked InAs/GaAs quantum dots (QDs) by means of steady-state …
Photoluminescence variation in InAs quantum dots embedded in InGaAs/AlGaAs quantum wells at thermal annealing
IJG Moreno, TV Torchynska, JLC Espinola - Physica E: Low-dimensional …, 2013 - Elsevier
Photoluminescence (PL) and its temperature dependence have been studied in MBE grown
InAs quantum dots (QDs) embedded in GaAs/Al0. 3Ga0. 7As/In0. 15Ga0. 85As/AlxGa1 …
InAs quantum dots (QDs) embedded in GaAs/Al0. 3Ga0. 7As/In0. 15Ga0. 85As/AlxGa1 …
Carrier capture and relaxation in InAs quantum dots
KW Sun, JW Chen, BC Lee, CP Lee… - …, 2005 - iopscience.iop.org
We have investigated the carrier capture and relaxation processes in InAs/GaAs self-
assembled quantum dots at room temperature by time-resolved photoluminescence …
assembled quantum dots at room temperature by time-resolved photoluminescence …
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: simulation and experiment
XL Zhou, YH Chen, HY Zhang, GY Zhou, TF Li… - Journal of Applied …, 2011 - pubs.aip.org
Considering the direct quantum tunneling of carrier, we propose a new carrier rate equation
model to simulate the temperature dependent photoluminescence (TDPL) of InAs/GaAs …
model to simulate the temperature dependent photoluminescence (TDPL) of InAs/GaAs …
Mechanisms of interdot coupling in (In, Ga) As/GaAs quantum dot arrays
Interdot coupling in (In, Ga) As/GaAs quantum dot arrays is studied by means of steady state
and time-resolved photoluminescence (PL). A peculiar dependence of the PL decay time on …
and time-resolved photoluminescence (PL). A peculiar dependence of the PL decay time on …
Carrier dynamics in an dots-in-a-well structure formed by atomic-layer epitaxy
We investigated the effects of carrier dynamics on the temperature dependence of the
photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots …
photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots …