While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic
applications, their performance is still not satisfactory. This has impeded the development of …

Solution-processed colloidal quantum dots (CQDs) are promising materials for
photodetectors operating in the short-wavelength infrared region (SWIR). Devices typically …

Native defects in semiconductors play an important role in their optoelectronic properties.
Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its …

Abstract Gallium oxide (Ga 2 O 3) has gained significant interest in recent years due to its
wide bandgap and related unique properties, making it suitable for many high power and …

Inverted perovskite solar cells incorporating RF sputtered NiO thin films as a hole transport
layer and window layer are demonstrated. The electrical and optical properties of the NiO …

One of the major limitations of oxide semiconductors technology is the lack of proper p-type
materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors …

High power impulse magnetron sputtering (HiPIMS) technology has attracted lots of
attention due to its high target ionization rate. This characteristic is desirable in preparing …

Nickel oxide-based hole transporting layers have been widely adopted for the construction
of pin-structured perovskite solar cells. So far, various techniques have been explored to …

Albeit the undesirable attributes of NiO x, such as low conductivity, unmanageable defects,
and redox reactions occurring at the perovskite/NiO x interface, which impede the progress …

The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is
used to control its carrier type and concentration, obtaining both n-and p-type films. Carrier …