This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Semiconductor nanowires (NWs) represent a new class of materials and a shift from
conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film …

Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially
grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over …

III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and
optical devices on Si platforms. We present position-controlled and orientation-controlled …

The development of strain relaxation in lattice-mismatched semiconductor nanowire
heterostructures is reviewed. Theoretical predictions for critical geometries for axial and core …

The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on
graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by …

One-dimensional compound semiconductor nanolasers, especially nanowire (NW)-based
nanolasers utilizing III-nitride (AlGaInN) materials system, are an emerging and promising …

Semiconductor alloy nanowires with spatially graded compositions (and bandgaps) provide
a new material platform for many new multifunctional optoelectronic devices, such as …

The effect of sulfur passivation on core–shell p–n junction GaAs nanowire (NW) solar cells
has been investigated. Devices of two types were investigated, consisting of indium tin oxide …

This review focuses on the emerging field of core–multishell (CMS) semiconductor
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …