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CMOS RF integrated circuits at 5 GHz and beyond
TH Lee, SS Wong - Proceedings of the IEEE, 2000 - ieeexplore.ieee.org
A strong demand for wireless products, an insatiable thirst for spectrum that pushes carrier
frequencies ever upward, and the constant quest for higher performance at lower power and …
frequencies ever upward, and the constant quest for higher performance at lower power and …
A 60-GHz CMOS receiver front-end
The unlicensed band around 60 GHz can be utilized for wireless communications at data
rates of several gigabits per second. This paper describes a receiver front-end that …
rates of several gigabits per second. This paper describes a receiver front-end that …
Rotary traveling-wave oscillator arrays: A new clock technology
J Wood, TC Edwards, S Lipa - IEEE Journal of Solid-State …, 2001 - ieeexplore.ieee.org
Rotary traveling-wave oscillators (RTWOs) represent a new transmission-line approach to
gigahertz-rate clock generation. Using the inherently stable LC characteristics of on-chip …
gigahertz-rate clock generation. Using the inherently stable LC characteristics of on-chip …
A 3-GHz 32-dB CMOS limiting amplifier for SONET OC-48 receivers
A CMOS limiting amplifier with a bandwidth of 3 GHz, a gain of 32 dB, and a noise figure of
16 dB is described. The amplifier is fabricated in a standard 2.5-V 0.25-/spl mu/m CMOS …
16 dB is described. The amplifier is fabricated in a standard 2.5-V 0.25-/spl mu/m CMOS …
A 300-GHz fundamental oscillator in 65-nm CMOS technology
Fundamental oscillators prove the existence of gain at high frequencies, revealing the speed
limitations of other circuits in a given technology. This paper presents an oscillator topology …
limitations of other circuits in a given technology. This paper presents an oscillator topology …
A fully integrated 0.5-5.5 GHz CMOS distributed amplifier
A fully integrated 0.5-5.5-GHz CMOS-distributed amplifier is presented. The amplifier is a
four stage design fabricated in a standard 0.6-/spl mu/m three-layer metal digital-CMOS …
four stage design fabricated in a standard 0.6-/spl mu/m three-layer metal digital-CMOS …
A 10-GHz global clock distribution using coupled standing-wave oscillators
A global clock network that incorporates standing waves and coupled oscillators to distribute
a high-frequency clock signal with low skew and low jitter is described. The key design …
a high-frequency clock signal with low skew and low jitter is described. The key design …
A 0.5-8.5 GHz fully differential CMOS distributed amplifier
HT Ahn, DJ Allstot - IEEE Journal of Solid-State Circuits, 2002 - ieeexplore.ieee.org
A fully integrated fully differential distributed amplifier with 5.5 dB pass-band gain and 8.5
GHz unity-gain bandwidth is described. The fully differential CMOS circuit topology yields …
GHz unity-gain bandwidth is described. The fully differential CMOS circuit topology yields …
A 0.6-22-GHz broadband CMOS distributed amplifier
RC Liu, KL Deng, H Wang - IEEE Radio Frequency Integrated …, 2003 - ieeexplore.ieee.org
A CMOS distributed amplifier (DA) covering 0.6 to 22 GHz is presented in this paper.
Cascode gain cells and m-derived matching sections are used to enhance the gain and …
Cascode gain cells and m-derived matching sections are used to enhance the gain and …
Prospects of CMOS technology for high-speed optical communication circuits
This paper describes the capabilities of deep-submicron CMOS technologies for the
realization of highly integrated optical communication transceivers in the range of tens of …
realization of highly integrated optical communication transceivers in the range of tens of …