The field of plasmonics has the potential to enable unique applications in the mid-infrared
(IR) wavelength range. However, as is the case regardless of wavelength, the choice of …

Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

This book discusses the physics and applications of quantum well infrared photodetectors
(QWIPs). The presentation is intended for both students as a learning text and …

The intermediate band (IB) solar cell has been proposed to increase the current of solar
cells while at the same time preserving the output voltage in order to produce an efficiency …

Photoconductivity is demonstrated with monodispersed HgSe colloidal quantum dots that
are illuminated with radiation resonant with 1Se–1Pe intraband electronic absorption …

Surface plasmon polaritons and their localized counterparts, surface plasmons, are widely
used at visible and near-infrared (near-IR) frequencies to confine, enhance, and manipulate …

III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

We report the device performance of normal-incidence (In, Ga) As/GaAs quantum dot
intersubband infrared photodetectors. A primary intersubband transition peak is observed at …

▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …