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The influence of surface treatment on the performance of photoconductive detectors based on silicon wafer (April 2024)
L Wu, M Zhang, X Shi, P Hu, H Yu… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
Owing to its narrow bandgap and mature preparation process, silicon wafers were widely
used to prepare broadband photodetection devices. To address the issue of weak light …
used to prepare broadband photodetection devices. To address the issue of weak light …
Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode
Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were
measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The …
measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The …
Non-Equilibrium Long-Wave Infrared HgCdTe Photodiodes: How the Exclusion and Extraction Junctions Work Separately
M Kopytko, K Majkowycz, J Sobieski, T Manyk… - Materials, 2024 - mdpi.com
The cooling requirement for long-wave infrared detectors still creates significant limitations
to their functionality. The phenomenon of minority-carrier exclusion and extraction in narrow …
to their functionality. The phenomenon of minority-carrier exclusion and extraction in narrow …
Interface trap-induced dark current in graded-layer long-wavelength infrared HgCdTe nBn photodetector
Y Zhang, T Cheng, T Xu, M Luo, S Luo, M Ge… - Infrared Physics & …, 2025 - Elsevier
Long-wavelength infrared (LWIR) mercury cadmium telluride (HgCdTe) nBn photodetectors
are highly promising for low dark current. Introducing Cd composition and do** …
are highly promising for low dark current. Introducing Cd composition and do** …
Low-frequency noise and impedance measurements in Auger suppressed LWIR N+ p (π) P+ n+ HgCdTe detector
K Achtenberg, W Gawron, Z Bielecki - Infrared Physics & Technology, 2024 - Elsevier
The paper reports on the electrical performances of LWIR N+ p (π) P+ n+ HgCdTe
photodiodes optimized for λ cut-off (50%)≈ 10.6 μm at T= 230 K. Presented work mainly …
photodiodes optimized for λ cut-off (50%)≈ 10.6 μm at T= 230 K. Presented work mainly …
Low‐frequency noise and deep‐level transient spectroscopy in LWIR Auger‐suppressed Hg1-xCdxTe heterostructure detector
Low-frequency noise spectroscopy (LFNS) along with deep-level transient spectroscopy
(DLTS) are complementary and effective tools to study and characterize the carrier traps in …
(DLTS) are complementary and effective tools to study and characterize the carrier traps in …
Performance Optimization of Hg1-xCdxTe Photovoltaic Detectors under Strong Illumination Considering Temperature and Wavelength
J Chen, W Chen, L Cai, P Yang, D Wang… - IEEE Photonics …, 2024 - ieeexplore.ieee.org
Currently, HgCdTe detectors are advancing towards very long wavelengths and room
temperature operation. However, as operating temperatures and illumination intensity …
temperature operation. However, as operating temperatures and illumination intensity …