This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and
their reduction/oxidation processes in the switching operation to form/annihilate a …

A potential replacement for current charge-based memory technologies in the nanoscale
device regime is a form of resistance change memory (RRAM) which utilizes cation transport …

We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …

The electrochemical metallization cell, also referred to as conductive bridge random access
memory, is considered to be a promising candidate or complementary component to the …

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure,
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …

Microcrossbar structured electrochemical metallization (ECM) cells based on silver iodide
(AgI) solid electrolyte were fabricated and analyzed in terms of the resistive switching effect …

Studies on a resistive switching memory based on a silver‐ion‐conductive solid polymer
electrolyte (SPE) are reported. Simple Ag/SPE/Pt structures containing polyethylene oxide …

Conductive bridge random access memory (CBRAM) has been regarded as a promising
candidate for the next‐generation nonvolatile memory technology. Even with the great …

An atomic switch is a nanoionic device that controls the diffusion of metal ions and their
reduction/oxidation processes in the switching operation to form/annihilate a metal atomic …