Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …

Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high
electron mobility and low dielectric constant. Compared with traditional Si devices, these …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-
compatible technology. The diodes are cointegrated on the same substrate together with the …

(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …

Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium
nitride (GaN), are very promising materials for the next generation of power electronics, to …

For the growth of low-defect crack-free GaN heterostructures on large-area silicon
substrates, compositional grading of AlGaN is a widely adapted buffer technique to restrict …