Sensor applications based on AlGaN/GaN heterostructures
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …
albeit new, is well-established material system in the fields of high power, high temperature …
Gallium nitride bulk crystal growth processes: A review
A Denis, G Goglio, G Demazeau - Materials Science and Engineering: R …, 2006 - Elsevier
Optoelectrical and microelectronic devices involving gallium nitride have become a
challenge but their development is limited because of a lack of suitable substrates. This …
challenge but their development is limited because of a lack of suitable substrates. This …
Stronger role of four-phonon scattering than three-phonon scattering in thermal conductivity of III-V semiconductors at room temperature
Recent studies reveal that four-phonon scattering can be important in determining thermal
conductivities of solids. However, these studies have been focused on materials where the …
conductivities of solids. However, these studies have been focused on materials where the …
Low thermal boundary resistance interfaces for GaN-on-diamond devices
The development of GaN-on-diamond devices holds much promise for the creation of high-
power density electronics. Inherent to the growth of these devices, a dielectric layer is placed …
power density electronics. Inherent to the growth of these devices, a dielectric layer is placed …
[PDF][PDF] Electrical properties and current transport mechanisms of the Au/n-GaN Schottky structure with solution-processed high-k BaTiO3 interlayer
The electrical properties and current transport mechanisms of Au/BaTiO3 (BTO)/n-GaN
metal–insulator–semiconductor (MIS) structures have been investigated by current–voltage …
metal–insulator–semiconductor (MIS) structures have been investigated by current–voltage …
Wide range do** control and defect characterization of GaN layers with various Mg concentrations
N Tetsuo, I Nobuyuki, T Kazuyoshi, K Keita… - Journal of Applied …, 2018 - pubs.aip.org
We demonstrated a wide range of magnesium (Mg) do** control (10 16–10 20 cm− 3) in a
GaN layer grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate and …
GaN layer grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate and …
Bottom‐Up Formation of III‐Nitride Nanowires: Past, Present, and Future for Photonic Devices
The realization of semiconductor heterostructures marks a significant advancement beyond
silicon technology, driving progress in high‐performance optoelectronics and photonics …
silicon technology, driving progress in high‐performance optoelectronics and photonics …
Improvement in the crystallinity of ZnO thin films by introduction of a buffer layer
T Nakamura, Y Yamada, T Kusumori, H Minoura… - Thin Solid Films, 2002 - Elsevier
The influence of pre-deposition of homo-buffer layers on film quality is studied as functions
of temperature and duration of pre-deposition, for zinc oxide (ZnO) crystalline films prepared …
of temperature and duration of pre-deposition, for zinc oxide (ZnO) crystalline films prepared …
Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN
M ** on the thermal transport of gallium nitride
S Li, L Yu, C Qi, K Du, G Qin, Z **ong - Frontiers in Materials, 2021 - frontiersin.org
Mg and Si as the typical dopants for p-and n-type gallium nitride (GaN), respectively, are
widely used in GaN-based photoelectric devices. The thermal transport properties play a key …
widely used in GaN-based photoelectric devices. The thermal transport properties play a key …