Abstract 4H-SiC wafer with alloy backside layer is gradually applied in power devices.
However, the laminated structure presents various challenges in manufacturing. In this …

Lubrication conditions are an important factor affecting both the machining efficiency and
quality of 4H–SiC. To investigate the tribological behaviors under different lubrication …

Currently, most magnetorheological polishing methods use point or linear scanning. When
these methods are applied to large-size semiconductor polishing, they are often limited by …

Previous work by our team has shown that not only can oxalic acid added to a reactive
methanol polishing solution significantly further improve SiC polishing removal rate but also …

This paper proposes a novel method for friction-induced chemical reaction machining of
single-crystal 4H-SiC wafers using pure iron. Material Removal Rate (MRR) and surface …

Single-crystal silicon carbide (SiC) substrates with ultra-smooth and low-damage
characteristics are at the core of high-power chip manufacturing. However, their high …

Determination of chemical effects involved in material removal during the polishing process
of 4H-SiC has been a challenge. In this study, the polishing processes of 4H-SiC under the …

This article uses a prepared photocatalytic fixed polishing plate to polish single-crystal
silicon carbide (SiC). The effect of chemical parameters (TiO 2 mass fraction, H 2 O 2 mass …

To elucidate the atomic mechanisms of the chemical mechanical polishing (CMP) of silicon
carbide (SiC), molecular dynamics simulations based on a reactive force field were used to …