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Brittle-ductile transition mechanism during grinding 4H-SiC wafer considering laminated structure
M Qu, C Huang, S Huang, X Peng, Z Wang, L Xu… - International Journal of …, 2024 - Elsevier
Abstract 4H-SiC wafer with alloy backside layer is gradually applied in power devices.
However, the laminated structure presents various challenges in manufacturing. In this …
However, the laminated structure presents various challenges in manufacturing. In this …
New skin corrosion effect of magnetorheological electro-Fenton polishing investigated by friction and wear experiments
Y Ou, H Wang, Y Wu, Z Chen, Q Yan, J Pan - Materials Science in …, 2024 - Elsevier
Currently, most magnetorheological polishing methods use point or linear scanning. When
these methods are applied to large-size semiconductor polishing, they are often limited by …
these methods are applied to large-size semiconductor polishing, they are often limited by …
Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron
This paper proposes a novel method for friction-induced chemical reaction machining of
single-crystal 4H-SiC wafers using pure iron. Material Removal Rate (MRR) and surface …
single-crystal 4H-SiC wafers using pure iron. Material Removal Rate (MRR) and surface …
Investigation of the tribological behaviors for 4H–SiC substrate under different lubrication conditions
Lubrication conditions are an important factor affecting both the machining efficiency and
quality of 4H–SiC. To investigate the tribological behaviors under different lubrication …
quality of 4H–SiC. To investigate the tribological behaviors under different lubrication …
Simulation of chemical reactions with methanol and oxalic acid on 4H-SiC surfaces before and after nanoabrasion
W Jiang, J Chen, X Wu, L Wu, J Yi, Z Jiang… - Applied Surface …, 2024 - Elsevier
Previous work by our team has shown that not only can oxalic acid added to a reactive
methanol polishing solution significantly further improve SiC polishing removal rate but also …
methanol polishing solution significantly further improve SiC polishing removal rate but also …
Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution
To elucidate the atomic mechanisms of the chemical mechanical polishing (CMP) of silicon
carbide (SiC), molecular dynamics simulations based on a reactive force field were used to …
carbide (SiC), molecular dynamics simulations based on a reactive force field were used to …
Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics
X Ban, S Zheng, Z Tian, J Zhu, W Ba, N Wang… - Tribology …, 2024 - Elsevier
Single-crystal silicon carbide (SiC) substrates with ultra-smooth and low-damage
characteristics are at the core of high-power chip manufacturing. However, their high …
characteristics are at the core of high-power chip manufacturing. However, their high …
Effects of oxidizer concentration and abrasive type on interfacial bonding and material removal in 4H-SiC polishing processes
Y Zhou, K Xu, Y Gao, Z Yu, F Zhu - Physical Chemistry Chemical …, 2024 - pubs.rsc.org
Determination of chemical effects involved in material removal during the polishing process
of 4H-SiC has been a challenge. In this study, the polishing processes of 4H-SiC under the …
of 4H-SiC has been a challenge. In this study, the polishing processes of 4H-SiC under the …
Study on the effect of process parameters and removal behavior of single-crystal SiC polishing based on a photocatalytic fixed polishing plate
C Lin, J **e, J Lu, Q Yan - Diamond and Related Materials, 2025 - Elsevier
This article uses a prepared photocatalytic fixed polishing plate to polish single-crystal
silicon carbide (SiC). The effect of chemical parameters (TiO 2 mass fraction, H 2 O 2 mass …
silicon carbide (SiC). The effect of chemical parameters (TiO 2 mass fraction, H 2 O 2 mass …