[HTML][HTML] Edge emitting mode-locked quantum dot lasers
Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …
Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems
AD Yoffe - Advances in physics, 2001 - Taylor & Francis
This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
Electronic and optical properties of strained quantum dots modeled by 8-band k⋅ p theory
We present a systematic investigation of the elastic, electronic, and linear optical properties
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
Distinctive characteristics of carrier-phonon interactions in optically driven semiconductor quantum dots
We review distinct features arising from the unique nature of the carrier-phonon coupling in
self-assembled semiconductor quantum dots. Because of the discrete electronic energy …
self-assembled semiconductor quantum dots. Because of the discrete electronic energy …
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
Carrier relaxation and recombination in self-organized InAs/GaAs quantum dots (QD's) is
investigated by photoluminescence (PL), PL excitation (PLE), and time-resolved PL …
investigated by photoluminescence (PL), PL excitation (PLE), and time-resolved PL …
Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots based on the existence of continuum states
Y Toda, O Moriwaki, M Nishioka, Y Arakawa - Physical Review Letters, 1999 - APS
Abstract Comparison of near-field and far-field photoluminescence excitation (PLE) spectra
gives new insight into the carrier relaxation process in InGaAs/GaAs self-assembled …
gives new insight into the carrier relaxation process in InGaAs/GaAs self-assembled …
Enhanced polar exciton-LO-phonon interaction in quantum dots
R Heitz, I Mukhametzhanov, O Stier, A Madhukar… - Physical Review Letters, 1999 - APS
Phonon-assisted exciton transitions in self-organized InAs/GaAs quantum dots (QDs) are
investigated by photoluminescence (PL) and PL excitation spectroscopy. An unexpectedly …
investigated by photoluminescence (PL) and PL excitation spectroscopy. An unexpectedly …
Phonon bottleneck in quantum dots: Role of lifetime of the confined optical phonons
XQ Li, H Nakayama, Y Arakawa - Physical Review B, 1999 - APS
The phonon bottleneck in quantum dots is reexamined theoretically within the intrinsic
phonon scattering mechanism. In the coupled-mode-equation formalism, an analytical …
phonon scattering mechanism. In the coupled-mode-equation formalism, an analytical …
Rapid carrier relaxation in quantum dots characterized by differential transmission spectroscopy
Carrier relaxation in self-organized In 0.4 Ga 0.6 A s/G a A s quantum dots is investigated by
time-resolved differential transmission measurements. The dots have a base dimension of …
time-resolved differential transmission measurements. The dots have a base dimension of …
Resonant Coupling of a Moiré Exciton to a Phonon in a WSe2/MoSe2 Heterobilayer
Moiré patterns with an angular mismatch in van der Waals heterostructures are a fascinating
platform to engineer optically generated excitonic properties. The moiré pattern can give rise …
platform to engineer optically generated excitonic properties. The moiré pattern can give rise …