Wide bandgap semiconductors are extremely attractive for the gamut of power electronics
applications from power conditioning to microwave transmitters for communications and …

Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have
matured dramatically over the last few years, and many hundreds of thousands of devices …

Power semiconductor devices based on silicon (Si) are quickly approaching their limits, set
by fundamental material properties. In order to address these limitations, new materials for …

An advantage for some wide bandgap materials, that is often overlooked, is that the thermal
coefficient of expansion (CTE) is better matched to the ceramics in use for packaging …

In this letter, a novel heterojunction AlGaN/AlN/GaN high-electron mobility transistor (HEMT)
is discussed. Contrary to normal HEMTs, the insertion of the very thin AlN interfacial layer …

With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility
transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I GV …

High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …

We report on the noninvasive measurement of temperature, ie, self-heating effects, in active
AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was …