A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices

HS Nalwa - RSC advances, 2020 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention
in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and …

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

E Elahi, M Ahmad, A Dahshan, M Rabeel, S Saleem… - Nanoscale, 2024 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical
characteristics have attracted significant interest from the scientific and industrial worlds in …

Liquid-Metal-Assisted Growth of Vertical GaSe/MoS2 p–n Heterojunctions for Sensitive Self-Driven Photodetectors

Z Zou, J Liang, X Zhang, C Ma, P Xu, X Yang, Z Zeng… - ACS …, 2021 - ACS Publications
van der Waals (vdW) vertical p–n junctions based on two-dimensional (2D) materials have
shown great potential in flexible, self-driven, high-efficiency electronic and optoelectronic …

High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

T Guo, X Song, P Wei, J Li, Y Gao… - … Applied Materials & …, 2022 - ACS Publications
Emerging two-dimensional narrow band gap materials with tunable band gaps and unique
electrical and optical properties have shown tremendous potential in broadband …

A wafer-scale synthesis of monolayer MoS 2 and their field-effect transistors toward practical applications

Y Liu, F Gu - Nanoscale Advances, 2021 - pubs.rsc.org
Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising
candidate for downscaling integrated electronics due to the special two-dimensional …

Gate-tunable rectification and photoresponse in a MoTe 2/SnS 2 van der Waals heterostructure based P–N diode

E Elahi, MA Khan, J Jeon, SK Jerng… - Journal of Materials …, 2023 - pubs.rsc.org
The p–n junction, one of the prominent electrical components capable of being utilized in
electronics and optoelectronics, has attracted renewed interest due to recent research in two …

Vertical 1T'‐WTe2/WS2 Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior

J Ma, J Wang, Q Chen, S Chen, M Yang… - Advanced Electronic …, 2024 - Wiley Online Library
In recent years, 2D reconfigurable phototransistors (RPTs) have been applied in broadband
convolutional processing, retinomorphic hardware devices, and non‐volatile memorizers …

Two-dimensional Ta2NiSe5/GaSe van der Waals heterojunction for ultrasensitive visible and near-infrared dual-band photodetector

Y Zhang, L Huang, J Li, Z Dong, Q Yu, T Lei… - Applied Physics …, 2022 - pubs.aip.org
Dual-band photodetectors have attracted intensive attention because of the requirement of
multiband information [such as visible (VIS) and near-infrared (NIR)] in multicolor imaging …

2D Cu9S5/PtS2/WSe2 Double Heterojunction Bipolar Transistor with High Current Gain

S Yang, L Pi, L Li, K Liu, K Pei, W Han… - Advanced …, 2021 - Wiley Online Library
Bipolar junction transistor (BJT) as one important circuit element is now widely used in high‐
speed computation and communication for its capability of high‐power signal amplification …

Influence of the Device Structure on the Electrical and Photodetector Properties of n-MoS2/p-GaSe Heterojunction Optoelectronic Devices

X Wu, W Guo, M Li, C ** high-
performance optoelectronic devices. Here, a strategy has been introduced to effectively …