Scaling trends of digital single-event effects: A survey of SEU and SET parameters and comparison with transistor performance
D Kobayashi - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
The history of integrated circuit (IC) development is another record of human challenges
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …
Monte Carlo simulation of single event effects
In this paper, we describe a Monte Carlo approach for estimating the frequency and
character of single event effects based on a combination of physical modeling of discrete …
character of single event effects based on a combination of physical modeling of discrete …
Impact of low-energy proton induced upsets on test methods and rate predictions
Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS
SRAM, consistent with results reported for other deep submicron technologies. The …
SRAM, consistent with results reported for other deep submicron technologies. The …
Improving integrated circuit performance through the application of hardness-by-design methodology
RC Lacoe - IEEE transactions on Nuclear Science, 2008 - ieeexplore.ieee.org
Increased space system performance is enabled by access to high-performance, low-power
radiation-hardened microelectronic components. While high performance can be achieved …
radiation-hardened microelectronic components. While high performance can be achieved …
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code.
Electronic and nuclear physics were used to generate statistical profiles of charge …
Electronic and nuclear physics were used to generate statistical profiles of charge …
Reliability and radiation effects in IC technologies
The reliability of advanced integrated circuit (IC) technologies may be dominated by the
interaction of environmental radiation with the devices in the ICs. In particular, single event …
interaction of environmental radiation with the devices in the ICs. In particular, single event …
Physical processes and applications of the Monte Carlo radiative energy deposition (MRED) code
MRED is a Python-language scriptable computer application that simulates radiation
transport. It is the computational engine for the on-line tool CRÈME-MC. MRED is based on …
transport. It is the computational engine for the on-line tool CRÈME-MC. MRED is based on …
Impact of ion energy and species on single event effects analysis
Experimental evidence and Monte-Carlo simulations for several technologies show that
accurate SEE response predictions depend on a detailed description of the variability of …
accurate SEE response predictions depend on a detailed description of the variability of …
Multiple-bit upset in 130 nm CMOS technology
The probability of proton-induced multiple-bit upset (MBU) has increased in highly-scaled
technologies because device dimensions are small relative to particle event track size. Both …
technologies because device dimensions are small relative to particle event track size. Both …
Anthology of the development of radiation transport tools as applied to single event effects
This anthology contains contributions from eleven different groups, each develo** and/or
applying Monte Carlo-based radiation transport tools to simulate a variety of effects that …
applying Monte Carlo-based radiation transport tools to simulate a variety of effects that …