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Single quantum dot nanolaser
Recent theoretical and experimental progress on nanolasers is reviewed with a focus on the
emission properties of devices operating with a few or even an individual semiconductor …
emission properties of devices operating with a few or even an individual semiconductor …
Interrelation of structural and electronic properties in quantum dots using an eight-band model
We present an eight-band k∙ p-model for the calculation of the electronic structure of wurtzite
semiconductor quantum dots (QDs) and its application to indium gallium nitride (In x Ga 1− x …
semiconductor quantum dots (QDs) and its application to indium gallium nitride (In x Ga 1− x …
Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra
In this work we investigate the electronic and optical properties of self-assembled quantum
dots by means of a tight-binding model. Coulomb and dipole matrix elements are calculated …
dots by means of a tight-binding model. Coulomb and dipole matrix elements are calculated …
Atomistic analysis of Auger recombination in -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative …
We present an atomistic theoretical study of the temperature dependence of the competition
between Auger and radiative recombination in c-plane (In, Ga) N/GaN quantum wells with …
between Auger and radiative recombination in c-plane (In, Ga) N/GaN quantum wells with …
Photophysics of graphene quantum dots: Insights from electronic structure calculations
S Schumacher - Physical Review B—Condensed Matter and Materials …, 2011 - APS
Understanding electronic excitations in graphene nanostructures plays a crucial role in
utilizing these recently emerging systems in optoelectronics and photonics. Based on time …
utilizing these recently emerging systems in optoelectronics and photonics. Based on time …
Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
In this work we present a comparison of multiband k⋅ p models, the effective-bond-orbital
approach, and an empirical tight-binding model to calculate the electronic structure for the …
approach, and an empirical tight-binding model to calculate the electronic structure for the …
Luminescence of a semiconductor quantum dot system
A microscopic theory is used to study photoluminescence of semiconductor quantum dots
under the influence of Coulomb and carrier-photon correlation effects beyond the Hartree …
under the influence of Coulomb and carrier-photon correlation effects beyond the Hartree …
Built-in field control in alloyed c-plane III-N quantum dots and wells
We investigate the degree to which the built-in electric field can be suppressed by
employing polarization-matched barriers in III-N quantum well and dot structures grown …
employing polarization-matched barriers in III-N quantum well and dot structures grown …
Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots
The electronic and optical properties of self-assembled In N∕ Ga N quantum dots (QDs) are
investigated by means of a tight-binding model combined with configuration-interaction …
investigated by means of a tight-binding model combined with configuration-interaction …
Impact of local composition on the emission spectra of InGaN quantum-dot LEDs
A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs)
exploits InGaN-quantum-dot-based active regions. However, the role of local composition …
exploits InGaN-quantum-dot-based active regions. However, the role of local composition …