Artificial neural networks for microwave computer-aided design: The state of the art

F Feng, W Na, J **, J Zhang, W Zhang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article presents an overview of artificial neural network (ANN) techniques for a
microwave computer-aided design (CAD). ANN-based techniques are becoming useful for …

ANNs for fast parameterized EM modeling: The state of the art in machine learning for design automation of passive microwave structures

F Feng, W Na, J **, W Zhang… - IEEE Microwave …, 2021 - ieeexplore.ieee.org
Artificial neural networks (ANNs) are information processing systems, with their design
inspired by studies of the ability of the human brain to learn from observations and …

A neural network-based hybrid physical model for GaN HEMTs

H Luo, X Yan, J Zhang, Y Guo - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
A neural network (NN)-based hybrid physical model for gallium nitride high-electron-mobility
transistors (GaN HEMTs) is proposed. In this model, the artificial NN (ANN) is used to …

[HTML][HTML] On large-signal modeling of GaN HEMTs: Past, development and future

H Luo, W Hu, Y Guo - Chip, 2023 - Elsevier
In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

An evolutionary multilayer perceptron-based large-signal model of GaN HEMTs including self-heating and trap** effects

W Hu, YX Guo - IEEE Transactions on Microwave Theory and …, 2021 - ieeexplore.ieee.org
Neural networks are widely used to build large-signal models; an appropriate network
architecture is important for high model accuracy and good generalization ability. In this …

Simulation and automated modeling of microwave circuits: State-of-the-art and emerging trends

QJ Zhang, E Gad, B Nouri, W Na… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
Microwave modeling and simulation are essential to designing microwave circuits and
systems. Although fundamental concepts and approaches for modeling and simulation are …

A scalable knowledge-based neural network model for GaN HEMTs with accurate trap** and self-heating effects characterization

M Li, QJ Zhang, F Feng, Z Li, T He… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, a scalable knowledge-based neural network (KBNN) large-signal model of
gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with accurate trap** and …

An improved compact large-signal GaN HEMT model for switch application

Z Hu, Q Zhang, K Ma, R He… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
The accurate current model near knee voltage is critical to precisely simulate the power
compression characteristics for power high-electron-mobility transistor (HEMT), especially …

Small‐signal modeling of microwave transistors using radial basis function artificial neural network‐comparison of different methods for spread constant determined

J Qi, H Lu, S Yan, R Zhao, D Tan… - … Journal of RF and …, 2022 - Wiley Online Library
This article presents a high‐precision modeling method to build a small signal model of
GaAs pseudomorphic high electron mobility transistor (pHEMT) by using a radial basis …

[HTML][HTML] A time delay neural network based technique for nonlinear microwave device modeling

W Liu, L Zhu, F Feng, W Zhang, QJ Zhang, Q Lin, G Liu - Micromachines, 2020 - mdpi.com
This paper presents a nonlinear microwave device modeling technique that is based on time
delay neural network (TDNN). The proposed technique can accurately model the nonlinear …