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Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks with Improved Thermal Stability (≥ 450 C)
In this work, for the first time, equivalent oxide thickness (EOT)-scaled FinFETs are
demonstrated based on a novel thickness-proportion controlled HfO2-ZrO2-HfO2 (TPC …
demonstrated based on a novel thickness-proportion controlled HfO2-ZrO2-HfO2 (TPC …
A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric Films
In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-
ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically …
ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically …
Potential Enhancement of fT and gₘfT/ID via the Use of NCFETs to Mitigate the Impact of Extrinsic Parasitics
The potential for negative-capacitance field-effect transistors (NCFETs) to enhance the unity-
current-gain cutoff frequency and ratio through a technique that mitigates the impacts of …
current-gain cutoff frequency and ratio through a technique that mitigates the impacts of …
Ultra Thin Body, Short Channel Silicon Transistors Down to 3 nm Si Channel
We demonstrate ultra thin body, high-κ, metal gate, Si transistors down to 3 nm Si channel
thickness. We further show that there is an enhancement (~ 20%) of injection velocity when …
thickness. We further show that there is an enhancement (~ 20%) of injection velocity when …
Differences in Ferroelectric Characteristics of Similar Hafnium Zirconium Oxide Films Studied Using X-Ray Photoelectron Spectroscopy
The ferroelectric (FE) properties of hafnium zirco-nium oxide (Hf_lxZr_xO_2), a material of
importance for many electronic applications such as low-power computing and non-volatile …
importance for many electronic applications such as low-power computing and non-volatile …
Exploration of Ferroelectric Devices for Use in Radio-Frequency Nanoelectronics
JK Wang - 2023 - era.library.ualberta.ca
Since the 1970s, the rapid advancement of semiconductor electronic devices has facilitated
an explosive growth of computation power in chips, which is exemplified by the rapid …
an explosive growth of computation power in chips, which is exemplified by the rapid …
Towards the Integration of Ferroelectric Negative Capacitance with Gallium Oxide Semiconductors for High Power Applications
GA Salcedo - 2022 - scholar.afit.edu
Gallium oxide is a relatively new semiconductor material with characteristics auspicious for
high frequency and high-voltage applications. Although several research groups have …
high frequency and high-voltage applications. Although several research groups have …
[کتاب][B] Modeling and Design of Nanoscale Ferroelectric and Negative-Capacitance Gate Transistors
YH Liao - 2021 - search.proquest.com
Integration of Hf-based ferroelectric materials into the MOSFET gate stack introduces new
physics that potentially enables continued scaling for both CMOS and memory devices. The …
physics that potentially enables continued scaling for both CMOS and memory devices. The …