The magnetic genome of two-dimensional van der Waals materials

QH Wang, A Bedoya-Pinto, M Blei, AH Dismukes… - ACS …, 2022 - ACS Publications
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as
one of the most promising areas in condensed matter research, with many exciting emerging …

Van der Waals heterostructures for high‐performance device applications: challenges and opportunities

SJ Liang, B Cheng, X Cui, F Miao - Advanced Materials, 2020 - Wiley Online Library
The discovery of two‐dimensional (2D) materials with unique electronic, superior
optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of …

Emerging spintronic materials and functionalities

L Guo, S Hu, X Gu, R Zhang, K Wang… - Advanced …, 2024 - Wiley Online Library
The explosive growth of the information era has put forward urgent requirements for
ultrahigh‐speed and extremely efficient computations. In direct contrary to charge‐based …

History-dependent domain and skyrmion formation in 2D van der Waals magnet Fe3GeTe2

MT Birch, L Powalla, S Wintz, O Hovorka… - Nature …, 2022 - nature.com
The discovery of two-dimensional magnets has initiated a new field of research, exploring
both fundamental low-dimensional magnetism, and prospective spintronic applications …

Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures

H Lin, F Yan, C Hu, Q Lv, W Zhu, Z Wang… - … Applied Materials & …, 2020 - ACS Publications
The van der Waals (vdW) materials offer an opportunity to build all-two-dimensional (all-2D)
spintronic devices with high-quality interfaces regardless of the lattice mismatch. Here, we …

Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications

Y Zhao, M Gobbi, LE Hueso, P Samorì - Chemical Reviews, 2021 - ACS Publications
Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …

Large room-temperature magnetoresistance in van der Waals ferromagnet/semiconductor junctions

W Zhu, S **e, H Lin, G Zhang, H Wu, T Hu… - Chinese Physics …, 2022 - iopscience.iop.org
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as
the magnetic random-access memory, magnetic sensors and programmable logic devices …

High-Quality Ferromagnet Fe3GeTe2 for High-Efficiency Electromagnetic Wave Absorption and Shielding with Wideband Radar Cross Section Reduction

G Li, S Ma, Z Li, Y Zhang, J Diao, L **a, Z Zhang… - ACS …, 2022 - ACS Publications
A high-quality Fe3GeTe2 single crystal with good electrical, magnetic, and electromagnetic
wave absorption and shielding properties was prepared in a large quantity (10 g level) by …

Room-temperature spin-valve devices based on Fe 3 GaTe 2/MoS 2/Fe 3 GaTe 2 2D van der Waals heterojunctions

W **, G Zhang, H Wu, L Yang, W Zhang, H Chang - Nanoscale, 2023 - pubs.rsc.org
The spin-valve effect has been the focus of spintronics over the last decades due to its
potential for application in many spintronic devices. Two-dimensional (2D) van der Waals …

Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Nanoflakes

G Zheng, WQ **e, S Albarakati, M Algarni, C Tan… - Physical Review Letters, 2020 - APS
The weak interlayer coupling in van der Waals (vdW) magnets has confined their application
to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer …