Graded-index separate confinement heterostructure AlGaN nanowires: toward ultraviolet laser diodes implementation
High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …
Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in …
SM Nawaz, MI Niass, Y Wang, Z ** in deep-ultraviolet laser diode
HU Rehman, A Aman, R Iqbal, MN Sharif, I Ahmad… - Optik, 2023 - Elsevier
AlGaN deep ultraviolet (DUV) with the high induced polarization emitters effect degrades the
performance of the laser diode (LD) and brings a higher injection current density, resulting in …
performance of the laser diode (LD) and brings a higher injection current density, resulting in …
100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10%
Growing thicker BAlN films while maintaining single‐phase wurtzite structure and boron
content over 10% has been challenging. In this study, we report on the growth of 100 nm …
content over 10% has been challenging. In this study, we report on the growth of 100 nm …
Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices
Y Chen, X Zhou, Z Zhang, G Miao, H Jiang, Z Li… - Materials Letters, 2021 - Elsevier
Herein, a metal–semiconductor-metal (MSM) structure dual-band solar-blind ultraviolet (UV)
photodetector based on 60.5-period Al 0.5 Ga 0.5 N/AlN superlattices (SLs) is reported. The …
photodetector based on 60.5-period Al 0.5 Ga 0.5 N/AlN superlattices (SLs) is reported. The …
Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition
The growth mechanism of AlN materials on a sapphire substrate with a hexagonal BN
overlayer (hBN/sapphire) by metal–organic chemical vapor deposition (MOCVD) is reported …
overlayer (hBN/sapphire) by metal–organic chemical vapor deposition (MOCVD) is reported …
[HTML][HTML] Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors
T Detchprohm, YS Liu, K Mehta, S Wang, H **_concentration_and_composition_graded_EBL_Techniques_Performance_improvement_of_263_nm_AlGaN_DUV_LDs_with_different/links/65a1809ec77ed94047736efc/Physica-Scripta-Performance-improvement-of-263-nm-AlGaN-DUV-LDs-with-different-do**-concentration-and-composition-graded-EBL-Techniques-Performance-improvement-of-263-nm-AlGaN-DUV-LDs-with-different.pdf" data-clk="hl=en&sa=T&oi=gga&ct=gga&cd=8&d=2336028841862476601&ei=_xKlZ8ucLZmp6rQPqKK8iA8" data-clk-atid="ObNH2No9ayAJ" target="_blank">[PDF] researchgate.net
Performance improvement of 263 nm AlGaN DUV LDs with different do** concentration and composition graded EBL Techniques
HU Rehman, NU Rahman, I Haq, F Wang… - Physica Scripta, 2024 - iopscience.iop.org
As part of this study, we present a study on the act of electrically driven Laser Diode (LD)
using trinary Aluminum Gallium Nitride (AlGaN) with optimized do** concentrations. To …
using trinary Aluminum Gallium Nitride (AlGaN) with optimized do** concentrations. To …
Composition-graded quantum barriers improve performance in AlGaN-based deep ultraviolet laser diodes
P Zhang, L Jia, A Zhang, MN Sharif, F Wang… - Optical …, 2022 - spiedigitallibrary.org
We propose two composition-graded quantum barriers (QBs) to improve the performance of
AlGaN-based deep ultraviolet laser diodes (DUV-LDs). The optical and electrical properties …
AlGaN-based deep ultraviolet laser diodes (DUV-LDs). The optical and electrical properties …