Materials science challenges to graphene nanoribbon electronics

V Saraswat, RM Jacobberger, MS Arnold - ACS nano, 2021 - ACS Publications
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

Carbon nanotubes: present and future commercial applications

MFL De Volder, SH Tawfick, RH Baughman, AJ Hart - science, 2013 - science.org
Worldwide commercial interest in carbon nanotubes (CNTs) is reflected in a production
capacity that presently exceeds several thousand tons per year. Currently, bulk CNT …

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

JP Llinas, A Fairbrother, G Borin Barin, W Shi… - Nature …, 2017 - nature.com
Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures
have promising electronic properties for high-performance field-effect transistors and ultra …

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

GJ Brady, AJ Way, NS Safron, HT Evensen… - Science …, 2016 - science.org
Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because
of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic …

Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment

R Yan, S Fathipour, Y Han, B Song, S **ao, M Li… - Nano …, 2015 - ACS Publications
van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials
are emerging as a solid-state materials family that exhibits novel physics phenomena that …

Carbon nanotube transistors scaled to a 40-nanometer footprint

Q Cao, J Tersoff, DB Farmer, Y Zhu, SJ Han - Science, 2017 - science.org
The International Technology Roadmap for Semiconductors challenges the device research
community to reduce the transistor footprint containing all components to 40 nanometers …

Low Variability in Synthetic Monolayer MoS2 Devices

KKH Smithe, SV Suryavanshi, M Muñoz Rojo… - ACS …, 2017 - ACS Publications
Despite much interest in applications of two-dimensional (2D) fabrics such as MoS2, to date
most studies have focused on single or few devices. Here we examine the variability of …

Toward high-performance digital logic technology with carbon nanotubes

GS Tulevski, AD Franklin, D Frank, JM Lobez, Q Cao… - ACS …, 2014 - ACS Publications
The slow-down in traditional silicon complementary metal-oxide–semiconductor (CMOS)
scaling (Moore's law) has created an opportunity for a disruptive innovation to bring the …

A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime—Part I: Intrinsic elements

CS Lee, E Pop, AD Franklin… - IEEE transactions on …, 2015 - ieeexplore.ieee.org
We present a data-calibrated compact model of carbon nanotube (CNT) FETs (CNTFETs)
based on the virtual-source (VS) approach, describing the intrinsic current-voltage and …

High-density integration of carbon nanotubes via chemical self-assembly

H Park, A Afzali, SJ Han, GS Tulevski… - Nature …, 2012 - nature.com
Carbon nanotubes have potential in the development of high-speed and power-efficient
logic applications,,,,,,. However, for such technologies to be viable, a high density of …